公开(公告)号：US20140301125A1

公开(公告)日：2014-10-09

申请号：US14229483

申请日：2014-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHIL-NAM YOON ,  SEON-RYEONG KANG ,  HUI-CHONG SHIN

IPC: G11C5/06 ,  H05K1/11 ,  G11C11/401

CPC classification number: G11C5/06 ,  G11C7/109 ,  G11C11/4093 ,  G11C2207/105 ,  H05K1/0225 ,  H05K1/0253 ,  H05K2201/09327 ,  H05K2201/10159

Abstract: A memory module includes a plurality of semiconductor memory devices and a circuit board. The circuit board is electrically connected to the plurality of semiconductor memory devices, and a signal line is disposed in the outermost layer of the circuit board. An electrical reference for the signal line is provided in a layer of the circuit board that is not adjacent to the outermost layer. Accordingly, an impedance of the signal line may be increased, and signal integrity of a signal transmitted through the signal line may be improved.

Abstract translation: 存储器模块包括多个半导体存储器件和电路板。 电路板电连接到多个半导体存储器件，信号线设置在电路板的最外层中。 在不与最外层相邻的电路板的层中提供用于信号线的电参考。 因此，可以增加信号线的阻抗，并且可以提高通过信号线传输的信号的信号完整性。