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公开(公告)号:US12041697B2
公开(公告)日:2024-07-16
申请号:US16919792
申请日:2020-07-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hiesang Sohn , Seyun Kim , Haengdeog Koh , Doyoon Kim , Soichiro Mizusaki , Jinhong Kim , Hajin Kim , Minjong Bae , Changsoo Lee
IPC: H05B1/02 , B29C70/02 , B29C70/88 , C03C4/14 , C03C8/04 , C03C8/14 , C03C8/16 , C03C14/00 , C03C17/00 , H05B3/14 , H05B3/26
CPC classification number: H05B1/0263 , B29C70/025 , B29C70/88 , C03C4/14 , C03C8/04 , C03C8/14 , C03C8/16 , C03C14/004 , C03C17/007 , C03C17/008 , H05B3/14 , H05B3/141 , H05B3/146 , H05B3/26 , C03C2217/452 , C03C2217/48 , H05B2203/013
Abstract: A heating element includes a plurality of matrix particles and a conductive inorganic filler disposed at interfaces between the plurality of matrix particles to provide a conductive network.
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公开(公告)号:US20240165370A1
公开(公告)日:2024-05-23
申请号:US18490657
申请日:2023-10-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Vutha Va , Hao Chen , Doyoon Kim , Jianzhong Zhang , Joonhyun Lee
CPC classification number: A61M21/00 , A61B5/4809 , A61B5/4812 , A61B5/4815 , A61B5/7275 , G16H10/60
Abstract: An apparatus for monitoring sleep quality includes a plurality of sensors, a plurality of actuator modules, a transceiver, and a processor operatively coupled with the plurality of sensor modules, the plurality of actuator modules, and the transceiver. The processor is configured to monitor a sleep session of a user utilizing the apparatus. To monitor the sleep session, the processor is further configured to monitor a sleep state of the user, monitor a sleep stage of the user, and monitor a sleep condition. The processor is further configured to select a sleep facilitating action, control the sleep facilitating action based on the monitoring, and collect data related to the sleep session, and update a sleep history database associated with the user based on the data related to the sleep session.
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公开(公告)号:US11856873B2
公开(公告)日:2023-12-26
申请号:US17395040
申请日:2021-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Soichiro Mizusaki , Doyoon Kim , Seyun Kim , Yumin Kim , Jinhong Kim , Youngjin Cho
CPC classification number: H10N70/24 , H10B63/34 , H10B63/845 , H10N70/8833
Abstract: A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variable resistance layer may include first to third oxide layers sequentially arranged in a direction perpendicular to a direction in which the first and second conductive elements are arranged. A dielectric constant of the second oxide layer may be greater than dielectric constants of the first and third oxide layers.
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公开(公告)号:US11162687B2
公开(公告)日:2021-11-02
申请号:US15633832
申请日:2017-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changsoo Lee , Doyoon Kim , Hajin Kim , Haengdeog Koh , Seyun Kim , Jinhong Kim , Taehun Kim , Soichiro Mizusaki , Minjong Bae , Hiesang Sohn , Kunwoo Choi
Abstract: A planar heating apparatus includes a substrate, first electrodes on the substrate, second electrodes alternately arranged with the first electrodes, an electrode connector connecting end portions of the first or second electrodes to each other and a power connector connected to the electrode connector and to which a power supply is connected. The power connector extends outside of the substrate.
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公开(公告)号:US20180136181A1
公开(公告)日:2018-05-17
申请号:US15810229
申请日:2017-11-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Minjong Bae , Jinhong Kim , Hajin Kim , Haengdeog Koh , Doyoon Kim , Seyun Kim , Soichiro MIZUSAKI , Hiesang Sohn , Changsoo Lee
CPC classification number: G01N33/0027 , G08B17/103 , H01B1/14 , H01B3/004 , H01B3/087 , H01B5/14
Abstract: A composite filler structure includes a substrate, a filler layer spaced apart from the substrate and comprising a matrix material layer and a plurality of conductive filler particles, an electrode in contact with the filler layer and configured to provide an electrical signal to the filler layer, and an insulating layer between the substrate and the electrode, and including an alkali oxide in an amount of about 7 weight percent or less, based on a total weight of the composite filler structure.
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公开(公告)号:US09859317B2
公开(公告)日:2018-01-02
申请号:US15269417
申请日:2016-09-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doyoon Kim , Ilhwan Kim
IPC: H04N9/07 , H04N5/225 , H01L31/062 , H01L27/146 , G02B1/12 , G02B27/10 , G02B27/12 , G02B5/20
CPC classification number: H01L27/1462 , G02B1/12 , G02B5/201 , G02B27/1006 , G02B27/12 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14645 , H01L27/14685 , H01L51/5268
Abstract: An optical apparatus including an optical functional layer having a high refractive index and a method of manufacturing the optical apparatus are provided. The optical functional layer includes a phase change material that has a first refractive index during heat treatment in a first temperature range and has a second refractive index, which is higher than the first refractive index, during heat treatment in a second temperature range that is higher than the first temperature range. The optical functional layer may be configured to have the second refractive index by using a micro-heater without having to be deposited at a high temperature.
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公开(公告)号:US12268009B2
公开(公告)日:2025-04-01
申请号:US17685942
申请日:2022-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yumin Kim , Doyoon Kim , Seyun Kim , Hyunjae Song , Seungyeul Yang
Abstract: Disclosed are a memory device including a vertical stack structure, a method of manufacturing the same, and/or an electronic device including the memory device. The memory device including a vertical stack structure includes an oxygen scavenger layer on a base substrate, a recording material layer on the oxygen scavenger layer and in direct contact with the oxygen scavenger layer, a channel layer on the recording material layer, a gate insulating layer on the channel layer, and a gate electrode on the gate insulating layer. The oxygen scavenger layer includes an element that forms oxygen vacancies in the recording material layer and does not include oxygen.
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公开(公告)号:US20250099029A1
公开(公告)日:2025-03-27
申请号:US18887842
申请日:2024-09-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chanwon Lee , Doyoon Kim , Jonggyu Lee
IPC: A61B5/00 , A61B5/0205 , A61B5/024 , A61B5/11 , A61B5/1455 , A61B5/28
Abstract: Provided is a sleep management system, including a plurality of sensors including a first sensor and a second sensor being configured to collect data of a user, a hub device configured to receive first data collected by the first sensor and second data collected by the second sensor, obtain first processed data based on processing of the first data and second processed data based on processing of the second data, and a user device configured to receive the first processed data and the second processed data, obtain sleep state information corresponding to a sleep stage and a body movement of the user based on the first processed data and the second processed data, determine whether a non-rapid eye movement (NREM) sleep behavior disorder of the user occurs based on the user's sleep stage and the user's body movement, and perform a preset operation based on an occurrence of the NREM.
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公开(公告)号:US20240417593A1
公开(公告)日:2024-12-19
申请号:US18596020
申请日:2024-03-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woosung Jeon , Yongtae Park , Doyoon Kim , Jaehoon Ryu , Sunjae Jang , Sungsik Jo
IPC: C09G1/02
Abstract: Provided is a slurry composition for chemical mechanical polishing (CMP) including an organic abrasive material that includes a supramolecular compound (e.g., supramolecular assembly), an analog thereof, or a derivative thereof. The slurry composition for chemical mechanical polishing may reduce or prevent CMP-induced defects, thereby reducing or suppressing product defects with a higher polishing selectivity.
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公开(公告)号:US11682717B2
公开(公告)日:2023-06-20
申请号:US17459527
申请日:2021-08-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yumin Kim , Doyoon Kim , Seyun Kim , Jinhong Kim , Soichiro Mizusaki , Youngjin Cho
IPC: H01L29/68 , H01L27/115
CPC classification number: H01L29/685 , H01L27/115
Abstract: Disclosed are a memory device including a vertical stack structure and a method of manufacturing the memory device. The memory device includes an insulating structure having a shape including a first surface and a protrusion portion protruding in a first direction from the first surface, a recording material layer covering the protrusion portion along a protruding shape of the protrusion portion and extending to the first surface on the insulating structure a channel layer on the recording material layer along a surface of the recording material layer, a gate insulating layer on the channel layer, and a gate electrode formed at a location on the gate insulating layer to face a second surface which is a protruding upper surface of the protrusion portion, wherein a void exists between the gate electrode and the insulating structure, defined by the insulating structure and the recording material layer.
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