公开(公告)号：US11329137B2

公开(公告)日：2022-05-10

申请号：US16927463

申请日：2020-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Naoto Umezawa ,  Satoru Yamada ,  Junsoo Kim ,  Honglae Park ,  Chunhyung Chung

IPC: H01L29/51 ,  H01L27/108 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity regions spaced apart from each other by the gate structure. The gate structure includes a gate dielectric layer in the second trench; a first metal layer on the gate dielectric layer; and a gate capping layer on the first metal layer. The gate dielectric layer includes D+ and ND2+ in an interface region, adjacent the first metal layer, and D is deuterium, N is nitrogen, and D+ is positively-charged deuterium.

公开(公告)号：US20220223713A1

公开(公告)日：2022-07-14

申请号：US17702856

申请日：2022-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Naoto Umezawa ,  Satoru Yamada ,  Junsoo Kim ,  Honglae Park ,  Chunhyung Chung

IPC: H01L29/51 ,  H01L27/108 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity regions spaced apart from each other by the gate structure. The gate structure includes a gate dielectric layer in the second trench; a first metal layer on the gate dielectric layer; and a gate capping layer on the first metal layer. The gate dielectric layer includes D+ and ND2+ in an interface region, adjacent the first metal layer, and D is deuterium, N is nitrogen, and D+ is positively-charged deuterium.

公开(公告)号：US20210134975A1

公开(公告)日：2021-05-06

申请号：US16927463

申请日：2020-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Naoto Umezawa ,  Satoru Yamada ,  Junsoo Kim ,  Honglae Park ,  Chunhyung Chung

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L27/108

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity regions spaced apart from each other by the gate structure. The gate structure includes a gate dielectric layer in the second trench; a first metal layer on the gate dielectric layer; and a gate capping layer on the first metal layer. The gate dielectric layer includes D+ and ND2+ in an interface region, adjacent the first metal layer, and D is deuterium, N is nitrogen, and D+ is positively-charged deuterium.

公开(公告)号：US10347684B2

公开(公告)日：2019-07-09

申请号：US15848733

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Honglae Park ,  Jaeho Kim ,  Hyoshin Ahn ,  Inkook Jang

IPC: H01L31/18 ,  H01L27/146 ,  H01L31/0248 ,  H04N5/361

Abstract: An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.