公开(公告)号：US20160336328A1

公开(公告)日：2016-11-17

申请号：US15223685

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L27/108

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

公开(公告)号：US09899392B2

公开(公告)日：2018-02-20

申请号：US15223685

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L21/20 ,  H01L27/108 ,  H01L21/02 ,  H01L27/11556

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

公开(公告)号：US09553119B2

公开(公告)日：2017-01-24

申请号：US14849187

申请日：2015-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Young Choi ,  Taegon Kim ,  JunHyun Cho

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

Abstract: Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.

Abstract translation: 提供了形成图像传感器的方法。 形成图像传感器的方法包括在衬底中形成沟槽以限定衬底的单位像素区域。 该方法包括在沟槽的暴露表面上形成原位掺杂的钝化层。 该方法包括在沟槽中的原位掺杂钝化层上形成封盖图案。 该方法包括在单位像素区域中形成光电转换区域。 此外，该方法包括在单位像素区域中形成浮动扩散区域。

公开(公告)号：US20160079288A1

公开(公告)日：2016-03-17

申请号：US14849187

申请日：2015-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Young Choi ,  Taegon Kim ,  JunHyun Cho

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

Abstract: Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.

Abstract translation: 提供了形成图像传感器的方法。 形成图像传感器的方法包括在衬底中形成沟槽以限定衬底的单位像素区域。 该方法包括在沟槽的暴露表面上形成原位掺杂的钝化层。 该方法包括在沟槽中的原位掺杂钝化层上形成封盖图案。 该方法包括在单位像素区域中形成光电转换区域。 此外，该方法包括在单位像素区域中形成浮动扩散区域。

公开(公告)号：US20150303060A1

公开(公告)日：2015-10-22

申请号：US14602671

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L21/02 ,  H01L27/115

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract translation: 本发明构思提供了硅前体，使用其形成层的方法，以及制造使用其的半导体器件的方法。 硅前体包括包含两个或多个硅原子的硅烷基团。 硅前体在制造半导体器件时主要使用的层（例如，硅层，氧化物层和氮化物层）的表面上具有高且均匀的吸附性能。