公开(公告)号：US20240379334A1

公开(公告)日：2024-11-14

申请号：US18651124

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woojin Jang ,  Wonyoung Jee ,  Kyungsun Kim ,  Mingil Kim ,  Sanghun Bang ,  Dongseok Han ,  Changkyu Kwag ,  Jihwan Kim ,  Junghyun Song ,  Kuihyun Yoon

IPC: H01J37/32

Abstract: An example coolant tube block assembly includes a first coolant tube block including at least one of a first coolant flow path tube and a second coolant flow path tube; a hub block configured to expose at least one of the first coolant flow path tube and the second coolant flow path tube on one side, and connected to a lower side of the first coolant tube block; a second coolant tube block including at least one third coolant flow path tube and at least one fourth coolant flow path tube communicating with at least one of the first coolant flow path tube and the second coolant flow path tube, and stacked with the first coolant tube block through the hub block; and a clamp disposed at a lower portion of the second coolant tube block and fastened to a fastening groove formed outside the hub block.

公开(公告)号：US20240128054A1

公开(公告)日：2024-04-18

申请号：US18199982

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changho Kim ,  Donghyeon Na ,  Yoonbum Nam ,  Seungbo Shim ,  Kyungsun Kim ,  Namkyun Kim

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J37/32642 ,  H01J37/32715 ,  H01L22/26 ,  H01J37/32568 ,  H01J37/32917 ,  H01J2237/2007 ,  H01J2237/24564 ,  H01J2237/334

Abstract: A plasma control apparatus includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber, a matcher disposed on the first transmission line a first plasma control circuit disposed on the first transmission line and configured to selectively and independently control harmonics of one or more of the at least two frequencies, a sensor configured to sense the harmonics of the plasma chamber, and an auxiliary RF power source disposed on the second transmission line and configured to generate auxiliary RF power to cancel out the harmonics sensed by the sensor, wherein, in a plan view, the first transmission line transfers the RF power adjacent to the center of the plasma chamber, and the second transmission line transfers the RF power and the auxiliary RF power and the auxiliary RF power adjacent to an edge of the plasma chamber.

公开(公告)号：US20250054733A1

公开(公告)日：2025-02-13

申请号：US18424996

申请日：2024-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yirop Kim ,  Seungbin Lim ,  Songyun Kang ,  Kyungsun Kim ,  Kuihyun Yoon ,  Jihwan Kim ,  Heewon Min ,  Insoo Lee ,  Junho Lee ,  Seunghee Cho

IPC: H01J37/32

Abstract: An apparatus for processing a substrate may include a process chamber, a substrate-supporting module, an upper electrode module and a valve module. The process chamber may have a substrate-processing region configured to process the substrate using process gases. The substrate-supporting module may be arranged in a lower region of the process chamber to support the substrate. The upper electrode module may be arranged in an upper region of the process chamber. The valve module may be provided to the upper electrode module to control a supplying of the process gases into the substrate-processing region.

公开(公告)号：US20240128056A1

公开(公告)日：2024-04-18

申请号：US18133277

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeontae Kim ,  Changho Kim ,  Yoonbum Nam ,  Seungbo Shim ,  Minyoung Hur ,  Kyungsun Kim ,  Juneeok Leem

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32568 ,  H01J37/32816 ,  H01J2237/334

Abstract: The present disclosure provides plasma etching apparatuses and operating methods of the plasma etching apparatuses. In some embodiments, a plasma etching apparatus includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The processing chamber is configured to receive etching gas, and to etch a wafer using plasma that has been formed according to a plasma source pulse and a bias pulse. The a plasma source generator is configured to generate the plasma source pulse. The bias generator is configured to generate the bias pulse. The acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma.

公开(公告)号：US20250149293A1

公开(公告)日：2025-05-08

申请号：US18747933

申请日：2024-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaewon Jeong ,  Dongchan Jeon ,  Kyungsun Kim ,  Sungyeol Kim ,  Yongwon Cho

IPC: H01J37/32

Abstract: A plasma generation circuit includes a high frequency power source configured to generate a first high frequency current; a current divider comprising a first capacitor and a variable capacitor and configured to divide the first high frequency current into a second high frequency current and a third high frequency current; an antenna assembly comprising a center antenna connected to the current divider and through which the second high frequency current is configured to flow, and an edge antenna connected in to the current divider and through which the third high frequency current is configured to flow, the antenna assembly being configured to induce generation of an inductively coupled plasma; a first coil coupled inductor configured to allow the second high frequency current to flow therethrough; and a second coil coupled inductor configured to allow the third high frequency current to flow therethrough and adjacent to the first coil coupled inductor.

公开(公告)号：US20250132134A1

公开(公告)日：2025-04-24

申请号：US18781389

申请日：2024-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeil Cho ,  Kyungsun Kim ,  Juho Kim ,  Changgil Son

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A gas supply assembly includes: a heat control plate including a heater and a cooler; a gas distribution plate below the heat control plate and including a process gas distribution passage with process gas delivered therethrough and a heat regulating gas distribution passage with heat regulating gas delivered therethrough; a heat transfer pad below the gas distribution plate and including a dielectric material pad including an electrode therein; and a showerhead including a spraying nozzle in communication with the process gas distribution passage and discharging the process gas. The heat transfer pad further includes a process gas movement channel in communication with the process gas distribution passage of the gas distribution plate and a heat regulating gas movement channel in communication with the heat regulating gas distribution passage of the gas distribution plate.

公开(公告)号：US20240038505A1

公开(公告)日：2024-02-01

申请号：US18295466

申请日：2023-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon Na ,  Jaebin Kim ,  Myeongsoo Shin ,  Dongseok Han ,  Kyungsun Kim ,  Namkyun Kim ,  Jaesung Kim ,  Seungbo Shim

IPC: H01J37/32 ,  H01J37/20

CPC classification number: H01J37/3266 ,  H01J37/20 ,  H01J37/32532

Abstract: A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.