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    Image sensor
    3.
    发明授权
    Image sensor 有权

    公开(公告)号：US10854677B2

    公开(公告)日：2020-12-01

    申请号：US16565553

    申请日：2019-09-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taek Soo Jeon ,  Kee Won Kim ,  Sang Hoon Uhm ,  Ki Joong Yoon ,  Ha Jin Lim

    IPC: H01L27/28 ,  H01L27/30

    Abstract: Image sensors with improved performance and a higher degree of integration are provided. The image sensors include a substrate including a first surface and a second surface opposite to each other, a first organic photoelectric conversion layer on the first surface of the substrate, a first penetration via connected to the first organic photoelectric conversion layer and extending through the substrate, a first floating diffusion region in the substrate adjacent to the second surface of the substrate, and a first transistor structure on the second surface of the substrate, wherein the first transistor structure includes a semiconductor layer configured to connect the first penetration via and the first floating diffusion region, a gate electrode on the semiconductor layer, and a gate dielectric film between the semiconductor layer and the gate electrode.

    Image sensors and methods of fabricating the same
    4.
    发明授权
    Image sensors and methods of fabricating the same 有权

    公开(公告)号：US10109664B2

    公开(公告)日：2018-10-23

    申请号：US15607958

    申请日：2017-05-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： In Gyu Baek ,  Sang Hoon Uhm ,  Tae Yon Lee ,  Jae Sung Hur

    IPC: H01L31/0232 ,  H01L27/146

    Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.

    Semiconductor memory device and method for fabricating the same
    6.
    发明授权
    Semiconductor memory device and method for fabricating the same 有权

    公开(公告)号：US12080791B2

    公开(公告)日：2024-09-03

    申请号：US17400218

    申请日：2021-08-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Tae Ryu ,  Sang Hoon Uhm ,  Ki Seok Lee ,  Min Su Lee ,  Won Sok Lee ,  Min Hee Cho

    IPC: H01L29/78 ,  H01L27/088 ,  H01L29/24 ,  H10B12/00

    CPC classification number: H01L29/7813 ,  H01L27/088 ,  H01L29/24 ,  H10B12/30

    Abstract: A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line on a substrate, a first interlayer insulating layer exposing the conductive line and defining a channel trench on the substrate, a channel layer extending along a bottom and side surface of the channel trench, a first gate electrode and a second gate electrode spaced apart from each other in the channel trench, a first gate insulating layer between the channel layer and the first gate electrode, and a second gate insulating layer between the channel layer and the second gate electrode. The channel layer includes a first oxide semiconductor layer and a second oxide semiconductor layer sequentially stacked on the conductive line. The first oxide semiconductor layer has a greater crystallinity than the second oxide semiconductor layer.

    Semiconductor image sensors having upper and lower transparent electrodes therein
    8.
    发明授权
    Semiconductor image sensors having upper and lower transparent electrodes therein 有权

    公开(公告)号：US10998381B2

    公开(公告)日：2021-05-04

    申请号：US16281519

    申请日：2019-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Hoon Uhm ,  Ki Joong Yoon ,  Taek Soo Jeon

    IPC: H01L29/08 ,  H01L27/30 ,  H01L51/44 ,  H01L27/146

    Abstract: A semiconductor image sensor includes a substrate and an isolation insulating pattern having a trench therein, on the substrate. A lower transparent electrode is provided within the trench. This lower transparent electrode includes a first layer and a different second layer on the first layer. An organic photoelectric layer is provided on the lower transparent electrode, and an upper transparent electrode is provided on the organic photoelectric layer. The first layer may contact a bottom and a side surface of the trench, and may have a seam therein, which is at least partially filled by a portion of the second layer. The first layer may have a higher light transmission efficiency relative to the second layer and a lower electrical resistance relative to the second layer.

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