Patterning method using electron beam and exposure system configured to perform the same
    2.
    发明授权
    Patterning method using electron beam and exposure system configured to perform the same 有权
    使用电子束和曝光系统的图案化方法配置为执行相同的操作

    公开(公告)号:US09164389B2

    公开(公告)日:2015-10-20

    申请号:US14197824

    申请日:2014-03-05

    Abstract: A patterning method may employ a particle beam, such as an electron beam (E-beam) and an exposure system that may include preparing an exposure layout defining a spatial distribution of an E-beam, performing an E-beam exposure process to a mask layer, based on the exposure layout, performing a developing process to the mask layer to form mask patterns including a first pattern. The first pattern may be a single solid pattern, and the exposure layout may include a first data associated with a plurality of E-beam conditions defined for a first region corresponding to the first pattern.

    Abstract translation: 图案化方法可以使用诸如电子束(E-beam)和曝光系统的粒子束,其可以包括准备定义电子束的空间分布的曝光布局,对掩模执行电子束曝光处理 层,基于曝光布局,对掩模层执行显影处理以形成包括第一图案的掩模图案。 第一图案可以是单实体图案,并且曝光布局可以包括与对应于第一图案的第一区域定义的多个电子束条件相关联的第一数据。

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