公开(公告)号：US11333979B2

公开(公告)日：2022-05-17

申请号：US16801613

申请日：2020-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Lee ,  Yongseok Jung ,  Jumi Bang ,  Byoungsup Ahn

IPC: G03F7/095 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.

公开(公告)号：US20210026245A1

公开(公告)日：2021-01-28

申请号：US16801613

申请日：2020-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Lee ,  Yongseok Jung ,  Jumi Bang ,  Byoungsup Ahn

IPC: G03F7/095 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.

公开(公告)号：US10274820B2

公开(公告)日：2019-04-30

申请号：US15919653

申请日：2018-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanchul Jeon ,  Munja Kim ,  Sungwon Kwon ,  Byunggook Kim ,  Roman Chalykh ,  Yongseok Jung ,  Jaehyuck Choi

IPC: G03F1/62 ,  G03F1/64

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

公开(公告)号：US09411236B2

公开(公告)日：2016-08-09

申请号：US14854637

申请日：2015-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongseok Jung ,  SangHee Lee

IPC: G03F7/20 ,  H01J37/06 ,  G03F1/20 ,  H01J37/317

CPC classification number: G03F7/2061 ,  G03F1/20 ,  G03F7/20 ,  G03F7/2059 ,  G03F7/2063 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/3045 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A patterning method may employ a particle beam, such as an electron beam (E-beam) and an exposure system that may include preparing an exposure layout defining a spatial distribution of an E-beam, performing an E-beam exposure process to a mask layer, based on the exposure layout, performing a developing process to the mask layer to form mask patterns including a first pattern. The first pattern may be a single solid pattern, and the exposure layout may include a first data associated with a plurality of E-beam conditions defined for a first region corresponding to the first pattern.

公开(公告)号：US09164389B2

公开(公告)日：2015-10-20

申请号：US14197824

申请日：2014-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongseok Jung ,  SangHee Lee

IPC: G03F7/20 ,  G03F1/20

CPC classification number: G03F7/2061 ,  G03F1/20 ,  G03F7/20 ,  G03F7/2059 ,  G03F7/2063 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/3045 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A patterning method may employ a particle beam, such as an electron beam (E-beam) and an exposure system that may include preparing an exposure layout defining a spatial distribution of an E-beam, performing an E-beam exposure process to a mask layer, based on the exposure layout, performing a developing process to the mask layer to form mask patterns including a first pattern. The first pattern may be a single solid pattern, and the exposure layout may include a first data associated with a plurality of E-beam conditions defined for a first region corresponding to the first pattern.

Abstract translation: 图案化方法可以使用诸如电子束（E-beam）和曝光系统的粒子束，其可以包括准备定义电子束的空间分布的曝光布局，对掩模执行电子束曝光处理 层，基于曝光布局，对掩模层执行显影处理以形成包括第一图案的掩模图案。 第一图案可以是单实体图案，并且曝光布局可以包括与对应于第一图案的第一区域定义的多个电子束条件相关联的第一数据。