公开(公告)号：US09076928B2

公开(公告)日：2015-07-07

申请号：US13906044

申请日：2013-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Seok Yang ,  Ki Seok Kim ,  Je Won Kim ,  Ju Bin Seo ,  Sang Seok Lee ,  Joon Sub Lee ,  Jin Bock Lee

IPC: H01L33/00 ,  H01L33/36 ,  H01L33/02 ,  H01L27/15

CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/02

Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

Abstract translation: 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。

公开(公告)号：US10580939B2

公开(公告)日：2020-03-03

申请号：US15718438

申请日：2017-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JungSung Kim ,  Junghee Kwak ,  Seong Seok Yang

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62 ,  H01L33/06 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

公开(公告)号：US20250169123A1

公开(公告)日：2025-05-22

申请号：US18745665

申请日：2024-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Seok Yang ,  Sanghyun Kim ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Jaejoon Oh ,  Jung-Wook Lee

IPC: H01L29/06 ,  H01L23/00 ,  H01L23/29 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a channel layer, a barrier layer on the channel layer including a material having a different energy band gap than a material included in the channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, a protection layer on the barrier layer and the gate electrode, a source electrode and a drain electrode on both sides of the gate electrode and extending through the protection layer to cover the side surfaces of the channel layer and the barrier layer, and a diffusion barrier layer within the protection layer covering the barrier layer and the gate electrode and including Nitrogen.

公开(公告)号：US11908977B2

公开(公告)日：2024-02-20

申请号：US17683416

申请日：2022-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JungSung Kim ,  Junghee Kwak ,  Seong Seok Yang

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/32 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62 ,  H01L33/40 ,  H01L33/06 ,  H01L33/10

CPC classification number: H01L33/46 ,  H01L33/32 ,  H01L33/387 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62 ,  H01L33/06 ,  H01L33/10 ,  H01L33/405 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

公开(公告)号：US20160163925A1

公开(公告)日：2016-06-09

申请号：US14958002

申请日：2015-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su Hyun Jo ,  Ki Seok Kim ,  Seong Seok Yang ,  Yong Il Kim ,  Seung Hwan Lee

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/58

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, microstructures regularly arranged on the first conductivity-type semiconductor layer around the light-emitting structure, and a gradient refractive layer on at least a portion of the microstructures, the gradient refractive layer having a lower refractive index than the first conductivity-type semiconductor layer.

Abstract translation: 一种半导体发光器件包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构，在发光二极管周围的第一导电型半导体层上规则排列的微结构 结构，以及至少部分微结构的梯度折射层，所述梯度折射层具有比所述第一导电类型半导体层低的折射率。

公开(公告)号：US11289626B2

公开(公告)日：2022-03-29

申请号：US16800037

申请日：2020-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JungSung Kim ,  Junghee Kwak ,  Seong Seok Yang

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/32 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62 ,  H01L33/40 ,  H01L33/06 ,  H01L33/10

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

公开(公告)号：US10790415B2

公开(公告)日：2020-09-29

申请号：US16842850

申请日：2020-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JungSung Kim ,  Junghee Kwak ,  Seong Seok Yang

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L33/54 ,  H01L33/32 ,  H01L33/06 ,  H01L33/40 ,  H01L33/10

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

公开(公告)号：US08946751B2

公开(公告)日：2015-02-03

申请号：US14015095

申请日：2013-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bock Lee ,  Ki Seok Kim ,  Je Won Kim ,  Ju-Bin Seo ,  Seong Seok Yang ,  Sang Seok Lee ,  Joon Sub Lee

IPC: H01L33/00 ,  H01L33/36 ,  H01L33/10 ,  H01L33/60 ,  H01L33/42 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/36 ,  H01L33/10 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.

Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。