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1.发明授权Non-volatile memory devices including vertical NAND strings and methods of forming the same 有权包括垂直NAND串的非易失性存储器件及其形成方法公开(公告)号：US08659946B2
公开(公告)日：2014-02-25
申请号：US13692334
申请日：2012-12-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Beom-jun Jin , Byung-seo Kim , Sung-Dong Kim
CPC classification number: H01L27/11582 , H01L21/28282 , H01L21/308 , H01L21/76802 , H01L27/11519 , H01L27/11551 , H01L27/11556 , H01L27/11565 , H01L27/11578
Abstract: A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be electrically connected to a respective word line plate, where the plurality of word line contacts are aligned to a bit line direction in the device.
Abstract translation: 基于NAND的非易失性存储器件可以包括垂直地布置为NAND串的多个存储单元和多个字线板，每个字线板电连接到NAND串中的存储器单元的相应栅极。 多个字线触点可以各自电连接到相应的字线板，其中多个字线触点与器件中的位线方向对准。
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2.发明申请公开(公告)号：US20130095653A1
公开(公告)日：2013-04-18
申请号：US13692334
申请日：2012-12-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Beom-jun Jin , Byung-seo Kim , Sung-Dong Kim
IPC: H01L21/768
CPC classification number: H01L27/11582 , H01L21/28282 , H01L21/308 , H01L21/76802 , H01L27/11519 , H01L27/11551 , H01L27/11556 , H01L27/11565 , H01L27/11578
Abstract: A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be electrically connected to a respective word line plate, where the plurality of word line contacts are aligned to a bit line direction in the device.
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