SEMICONDUCTOR DEVICE
    5.
    发明申请

    公开(公告)号:US20210384217A1

    公开(公告)日:2021-12-09

    申请号:US17151383

    申请日:2021-01-18

    Abstract: A semiconductor device includes gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of a substrate; interlayer insulating layers alternately stacked with the gate electrodes on the substrate; channel structures extending through the gate electrodes; and a separation region extending through the gate electrodes in the first direction and extending in a second direction perpendicular to the first direction, wherein each of the gate electrodes comprises a first conductive layer and a second conductive layer sequentially stacked, the second conductive layer including a metal nitride, and wherein the first conductive layer and the second conductive layer are each in physical contact with the separation region.

    Device and method of selecting pathway of target compound

    公开(公告)号:US10510434B2

    公开(公告)日:2019-12-17

    申请号:US15334456

    申请日:2016-10-26

    Abstract: Provided are a method and a device for selecting a pathway for a target compound by combining biochemical and chemical processes together, wherein an input of at least one pathway for synthesis of a target compound or degradation into a target compound is received, hybrid arrangements of one or more reaction steps included in the at least one pathway are predicted, a pathway feasibility score is computed, and at least one hybrid arrangement is selected based on the pathway feasibility score.

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