SEMICONDUCTOR MEASUREMENT APPARATUS

    公开(公告)号:US20240418645A1

    公开(公告)日:2024-12-19

    申请号:US18408247

    申请日:2024-01-09

    Abstract: An example semiconductor measurement apparatus includes a light source, a pattern generator, a stage, an image sensor, and a controller. The light source is configured to output light in a predetermined wavelength band. The pattern generator is configured to generate light including a speckle pattern by scattering the light output from the light source. The stage is disposed on a movement path of the light including the speckle pattern, and a sample reflecting the light including the speckle pattern is seated on the stage. The image sensor is configured to receive light reflected from the sample and generate an original image representing a diffractive pattern of light reflected from the sample. The controller is configured to generate a prediction image for estimating diffractive characteristics of light incident on the image sensor.

    SEMICONDUCTOR MEASUREMENT APPARATUS

    公开(公告)号:US20250012556A1

    公开(公告)日:2025-01-09

    申请号:US18403801

    申请日:2024-01-04

    Abstract: A semiconductor measurement apparatus includes lighting unit; a light receiving unit; and a control unit configured to: generate a prediction equation representing the original image, where the prediction equation is based on a plurality of elements of a Mueller matrix, approximate each of the plurality of elements of the Mueller matrix to a polynomial including bases of a Zernike polynomial and coefficients, generate optimization coefficients based on a sum of the coefficients and a difference between the prediction equation and the original image, determine whether an optimization condition is satisfied based on the optimization coefficients and a minimum value, and select a dimension based on the optimization coefficients and the bases when the optimization condition is satisfied.

    WAFER INSPECTION APPARATUS
    5.
    发明申请

    公开(公告)号:US20210082725A1

    公开(公告)日:2021-03-18

    申请号:US16849631

    申请日:2020-04-15

    Abstract: Provided is a wafer inspection apparatus including a monochromator that extracts monochromatic light, a collimator that outputs the monochromatic light as parallel light, a first polarization assembly that polarizes the parallel light and radiates the polarized light to a wafer, an imaging optical system that condenses light reflected from the wafer, a spectroscope that splits the condensed light into a plurality of spectrums, a first lens that condenses the plurality of spectrums, a second polarization assembly that outputs the plurality of spectrums as a plurality of polarized lights having different diffraction orders and a difference of 90°, a second lens that condenses the plurality of polarized lights, a third polarization assembly that outputs common polarized light based on the plurality of polarized interfering with each other, a camera that generates a phase difference image based on the common polarized light, and a signal processor that analyzes the phase difference image.

    SEMICONDUCTOR MEASUREMENT APPARATUS
    8.
    发明公开

    公开(公告)号:US20230400404A1

    公开(公告)日:2023-12-14

    申请号:US18154990

    申请日:2023-01-16

    CPC classification number: G01N21/21 G01B11/24 G01B2210/56

    Abstract: A semiconductor measurement apparatus includes an illumination unit including a light source and at least one illumination polarization element, a light receiving unit including at least one light-receiving polarization element disposed on a path of light reflected by a sample, and an image sensor positioned to receive light passing through the at least one light-receiving polarization element and configured to output an original image, and a control unit configured to determine, by processing the original image, a selected critical dimension among critical dimensions of a structure included in a region of the sample. The control unit is configured to obtain a plurality of sample images by selecting regions of the original image in which a peak due to interference appears, to determine a plurality of elements included in a Mueller matrix using the plurality of sample images, and to determine the selected critical dimension based on the plurality of elements.

    Digital holography microscope (DHM), and inspection method and semiconductor manufacturing method using the DHM

    公开(公告)号:US11314205B2

    公开(公告)日:2022-04-26

    申请号:US16225638

    申请日:2018-12-19

    Abstract: A low-cost digital holography microscope (DHM) that is capable of performing inspection at high speed while accurately inspecting an inspection object at high resolution, an inspection method using the DHM, and a method of manufacturing a semiconductor device by using the DHM are provided. The DHM includes: a light source configured to generate and output light; a beam splitter configured to cause the light to be incident on an inspection object and output reflected light from the inspection object; and a detector configured to detect the reflected light, wherein, when the reflected light includes interference light, the detector generates a hologram of the interference light, and wherein no lens is present in a path from the light source to the detector.

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