公开(公告)号：US06737225B2

公开(公告)日：2004-05-18

申请号：US10034647

申请日：2001-12-28

Applicant: Seth Andrian Miller

Inventor： Seth Andrian Miller

IPC: G03F742

CPC classification number: B81C1/00476 ,  B81B3/0005 ,  B81C2201/056 ,  B81C2201/117 ,  G03F7/422

Abstract: A method for removing sacrificial layers during the process of fabricating micro-mechanical devices with a solution of super-critical carbon dioxide. A mixture of super-critical carbon dioxide with other solvents, co-solvents and surfactants is used during the process to remove sacrificial layers. The disclosed method has many advantages over the prior art, including a reduction of capillary forces that can damage the free-standing micro-mechanical superstructures, an absence of plasma induced damage caused by ashing operations, and a reduction in the use of environmentally sensitive chemicals. Another advantage of the disclosed process is that the swelling of the photoresist layers is minimized. The disclosed method may be used to remove sacrificial layers that were deposited during the process of fabricating micro-mechanical devices. The method is also effective to remove a protective recoat layer that is deposited over a micro-mechanical device after it has been fabricated.

Abstract translation: 在用超临界二氧化碳溶液制造微机械装置的过程中去除牺牲层的方法。 在该过程中，使用超临界二氧化碳与其它溶剂，共溶剂和表面活性剂的混合物来除去牺牲层。 所公开的方法与现有技术相比具有许多优点，包括可以减少可能损害自立微机械上层建筑的毛细管力的减少，灰化作用引起的等离子体引起的损伤的缺乏以及对环境敏感化学品的使用的减少 。 所公开的方法的另一个优点是光致抗蚀剂层的溶胀最小化。 所公开的方法可用于去除在制造微机械装置的过程中沉积的牺牲层。 该方法也有效地去除了在其被制造之后在微机械装置上沉积的保护性覆层。