公开(公告)号：US09615477B2

公开(公告)日：2017-04-04

申请号：US13958414

申请日：2013-08-02

Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.

Inventor： Yan Ling

IPC: H05K1/14 ,  H05K7/02 ,  H05K1/18 ,  H05K3/36 ,  H05K3/32 ,  G02F1/1345

CPC classification number: H05K7/026 ,  G02F1/13452 ,  H05K1/189 ,  H05K3/323 ,  H05K3/361 ,  H05K2201/10128 ,  H05K2201/10136 ,  Y10T29/49117

Abstract: A connecting device for connecting a substrate unit and a chip unit includes a first flexible connection unit having at least one first wire extending from a first end to a second end on a surface of the substrate unit, and a rigid connection unit having at least one second conductive wire for electrically connecting to the first conductive wire. The chip unit is sequentially and electrically connected to the substrate unit first via the rigid connection unit and then via the flexible connection unit.

公开(公告)号：US09589666B2

公开(公告)日：2017-03-07

申请号：US14522560

申请日：2014-10-23

Applicant: Shanghai Tianma Micro-Electronics Co., Ltd. ,  Tianma Micro-Electronics Co., Ltd.

Inventor： Yajie Zheng ,  Yan Ling

IPC: G09G3/36 ,  G11C19/28 ,  G09G3/20 ,  G09G3/32 ,  H04N5/374 ,  H04N5/376

CPC classification number: G11C19/287 ,  G09G3/20 ,  G09G3/32 ,  G09G2300/0857 ,  G09G2310/0286 ,  G09G2320/0209 ,  H04N5/374 ,  H04N5/3765

Abstract: An amorphous silicon gate driving circuit includes multiple cascaded shift registers. Each of the shift registers includes a shift register unit, which contains multiple TFTs and multiple capacitors, an N-th output terminal GN, an (N+1)-th output terminal GN+1, a high voltage signal terminal Vgh and a low voltage signal terminal Vgl; and an output control unit having an N-th additional output terminal. The output control unit is configured to control a time period during which the N-th additional output terminal outputs a high voltage level to be within a time period during which the N-th output terminal outputs the high voltage level, where a signal falling edge for turning off TFTs at a former one of two adjacent rows of pixel units is completely separated from a signal rising edge for turning on TFTs at a latter one.

Abstract translation: 非晶硅栅极驱动电路包括多个级联移位寄存器。 每个移位寄存器包括移位寄存器单元，其包含多个TFT和多个电容器，第N输出端子GN，第（N + 1）输出端子GN + 1，高电压信号端子Vgh和低电平 电压信号端子Vgl; 以及具有第N个附加输出端子的输出控制单元。 输出控制单元被配置为控制第N个附加输出端子输出高电压电平的时间段，该时间段在第N个输出端子输出高电压电平的时间段内，其中信号下降沿 用于关闭两个相邻行像素单元中的前一个TFT的TFT完全与信号上升沿分离，用于在后一个TFT上导通TFT。

公开(公告)号：US20150001415A1

公开(公告)日：2015-01-01

申请号：US14165435

申请日：2014-01-27

Applicant: Tianma Micro-Electronics Co., Ltd. ,  Shanghai Tianma Micro-Electronics Co., Ltd.

Inventor： Xiaolei FEI ,  Yan Ling ,  Hong Zhu ,  Gang Qi

IPC: H05F3/00 ,  G01T1/17

CPC classification number: H05F3/00 ,  G01T1/17 ,  H01L27/0288 ,  H01L27/0292 ,  H01L27/14658

Abstract: An electrostatic protection structure is disclosed. One inventive aspect is an electrostatic protection structure. The electrostatic protection structure includes a data line, adapted to transmit a pixel signal, where the data line includes an electrostatic diverting path. The electrostatic protection structure also includes a signal transmission path, where a first terminal of the signal transmission path is connected to a pixel unit, and a second terminal of the signal transmission path is connected to a signal output terminal, where the second terminal is configured to output a signal from the pixel unit. A first terminal of the electrostatic diverting path is connected to a constant potential, and a second terminal of the electrostatic diverting path is connected to the signal output terminal, and the impedance of the signal transmission path is greater than the impedance of the electrostatic diverting path.

Abstract translation: 公开了静电保护结构。 本发明的一个方面是静电保护结构。 静电保护结构包括适于传输像素信号的数据线，其中数据线包括静电转向路径。 静电保护结构还包括信号传输路径，其中信号传输路径的第一端子连接到像素单元，并且信号传输路径的第二端子连接到信号输出端子，其中第二端子被配置 以输出来自像素单元的信号。 静电转向路径的第一端子连接到恒定电位，并且静电转向路径的第二端子连接到信号输出端子，并且信号传输路径的阻抗大于静电转向路径的阻抗 。