公开(公告)号：US20230168550A1

公开(公告)日：2023-06-01

申请号：US18070579

申请日：2022-11-29

Applicant: Sharp Display Technology Corporation

Inventor： Yuhichi SAITOH ,  Hiroaki FURUKAWA ,  Atsushi HACHIYA ,  Hiroshi MATSUKIZONO

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1339 ,  H01L27/12 ,  H01L29/786 ,  G09G3/36

CPC classification number: G02F1/136227 ,  G02F1/133388 ,  G02F1/1368 ,  G02F1/136209 ,  G02F1/134309 ,  G02F1/13394 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78633 ,  H01L29/7869 ,  H01L27/1288 ,  G09G3/3677 ,  G02F1/13439 ,  G02F2202/16 ,  G09G2310/0297

Abstract: An active matrix substrate includes a substrate, a pixel TFT that is supported by the substrate, provided corresponding to each of a plurality of pixel areas, and includes an oxide semiconductor layer, an organic insulating layer disposed above at least the oxide semiconductor layer of the pixel TFT, and an inorganic insulating layer disposed in contact with an upper surface of the organic insulating layer on the organic insulating layer. The organic insulating layer and the inorganic insulating layer are provided with a plurality of dual-layer hole structure portions, each of the dual-layer hole structure portions includes a through-hole provided in the inorganic insulating layer and a bottomed hole provided in the organic insulating layer and positioned below the through-hole, and the through-hole is positioned on an inner side of an outer edge of the bottomed hole when viewed from a normal direction of the substrate.

公开(公告)号：US20250053050A1

公开(公告)日：2025-02-13

申请号：US18932853

申请日：2024-10-31

Applicant: Sharp Display Technology Corporation

Inventor： Yuhichi SAITOH ,  Hiroaki FURUKAWA ,  Atsushi HACHIYA ,  Hiroshi MATSUKIZONO

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786

Abstract: An active matrix substrate includes a substrate, a pixel TFT that is supported by the substrate, provided corresponding to each of a plurality of pixel areas, and includes an oxide semiconductor layer, an organic insulating layer disposed above at least the oxide semiconductor layer of the pixel TFT, and an inorganic insulating layer disposed in contact with an upper surface of the organic insulating layer on the organic insulating layer. The organic insulating layer and the inorganic insulating layer are provided with a plurality of dual-layer hole structure portions, each of the dual-layer hole structure portions includes a through-hole provided in the inorganic insulating layer and a bottomed hole provided in the organic insulating layer and positioned below the through-hole, and the through-hole is positioned on an inner side of an outer edge of the bottomed hole when viewed from a normal direction of the substrate.