公开(公告)号：US10859630B2

公开(公告)日：2020-12-08

申请号：US15813553

申请日：2017-11-15

Applicant: Silicon Motion, Inc.

Inventor： Hung-Sen Kuo ,  Te-Wei Chen ,  Hung-Sheng Chang ,  Ming-Wan Kuan

IPC: G01R31/319 ,  G01R31/3183 ,  G01R31/28 ,  G01R31/30 ,  G01R31/3177

Abstract: A circuit test method for a test device to test a device under test is provided. The circuit test method includes the steps of applying zero volts to a plurality of power pins of the device under test; applying a test voltage to a first signal pin among a plurality of signal pins of the device under test; and measuring a current on a second signal pin among the plurality of signal pins of the device under test and determining whether there is a leakage current in the device under test.