公开(公告)号：US20240178318A1

公开(公告)日：2024-05-30

申请号：US18072201

申请日：2022-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Martin B. Mollat ,  Henry L. Edwards ,  Alexei Sadovnikov

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/7835 ,  H01L21/823814 ,  H01L29/66659 ,  H01L29/7816

Abstract: An integrated circuit includes a source region and a drain region spaced apart and extending into a semiconductor layer. A gate electrode extends between the source and the drain regions, and a dielectric layer is between the gate electrode and the semiconductor layer. The dielectric layer includes a first portion having a first thickness and a second portion having a second greater second thickness and a lateral perimeter surrounding the source region. The lateral perimeter includes a first edge having a first linear segment extending between the source region and the drain region along a first direction and a second edge having a second linear segment extending over the semiconductor layer along a different second direction. A fillet of the second portion connects the first linear segment and the second linear segment of the lateral perimeter.