公开(公告)号：US20140376134A1

公开(公告)日：2014-12-25

申请号：US13921598

申请日：2013-06-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bradford Lawrence Hunter ,  Richard David Nicholson

IPC: H02H9/04

CPC classification number: H02H9/044 ,  H01L21/761 ,  H01L27/0274 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7816 ,  H02H9/046

Abstract: In an integrated circuit device having an internal circuitry that requires voltage protection (e.g. negative voltage protection), the voltage protection is provided by a FET. In some embodiments, the source and drain of the FET are connected in series with the internal circuitry and an I/O node through which the voltage can be received (e.g. the source connected to the internal circuitry and the drain connected to the I/O node). In some embodiments, the FET is drain-extended (e.g. a drain-extended PFET).

Abstract translation: 在具有需要电压保护（例如负电压保护）的内部电路的集成电路器件中，由FET提供电压保护。 在一些实施例中，FET的源极和漏极与内部电路和可以接收电压的I / O节点串联（例如，连接到内部电路的源极和连接到I / O的漏极 节点）。 在一些实施例中，FET是漏极延伸的（例如漏极延伸的PFET）。