RESIDUAL STATE OF CHARGE RUNTIME UPDATE
    1.
    发明公开

    公开(公告)号:US20240337696A1

    公开(公告)日:2024-10-10

    申请号:US18362243

    申请日:2023-07-31

    CPC classification number: G01R31/367 G01R31/388

    Abstract: A method comprises recording a first voltage value of a voltage source, recording a second voltage value of the voltage source, and determining a first estimated residual state of charge value (SOCestimated) of the voltage source based on the first voltage value and the second voltage value. The method also comprises determining a factor based on one of the first voltage value and the second voltage value and calculating a residual state of charge value (SOCresidual) of the voltage source based on the first estimated residual state of charge value (SOCestimated) and based on the factor.

    CALIBRATION OF CIRCUITRY PARAMETERS FOR CURRENT SENSING

    公开(公告)号:US20240319280A1

    公开(公告)日:2024-09-26

    申请号:US18307934

    申请日:2023-04-27

    Abstract: Various examples disclosed herein relate to current sensing via current sensing circuitry, and more particularly, to calibrating current sensing circuitry to dynamically detect current ranges across a load. In an example embodiment, a microcontroller unit (MCU) is provided herein that includes a processor and current sensing circuitry coupled to the processor. The current sensing circuitry of the MCU is configured to measure voltages associated with a load. The processor of the MCU is configured to obtain the measured voltages from the current sensing circuitry, identify a temperature drift of the current sensing circuitry that exceeds a threshold value, update parameters with which to determine a current associated with the load based on the temperature drift, and determine the current associated with the load based on the updated parameters and the measured voltages.

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