公开(公告)号：US20190093255A1

公开(公告)日：2019-03-28

申请号：US16085322

申请日：2017-03-22

Applicant: TOKUYAMA CORPORATION

Inventor： Toru NAGASHIMA ,  Reiko OKAYAMA ,  Masayuki FUKUDA ,  Hiroyuki YANAGI

IPC: C30B25/20 ,  C30B23/02 ,  C30B29/40 ,  C30B33/08 ,  H01L21/02

Abstract: A method for producing an AlN single crystal substrate, the method including: i) preparing a first base substrate consisting of a first AlN single crystal; ii) growing a first AlN single crystal layer over a main face of the first base substrate, to obtain a layered body; iii) cutting the first MN single crystal layer of the layered body, to separate the layered body into a second base substrate and a first part of the first AlN single crystal layer, the second base substrate including the first base substrate and a thin film layered thereon, the thin film being a second part of the first AlN single crystal layer; iv) polishing a surface of the thin film, to obtain a third base substrate consisting of a second AlN single crystal; and v) growing a second AlN single crystal layer over the polished surface of the third base substrate.