公开(公告)号：US20210043461A1

公开(公告)日：2021-02-11

申请号：US16983229

申请日：2020-08-03

Applicant: Tokyo Electron Limited

Inventor： Seiichi WATANABE ,  Hiroki YAMADA ,  Manabu SATO

IPC: H01L21/311 ,  H01L21/3213

Abstract: There is provision of a method for etching a substrate above which a first underlying film, a second underlying film positioned deeper than the first underlying film, a silicon oxide film formed on the first and second underlying films, and a mask on the silicon oxide film are provided. In the mask, first and second openings are formed above the first and second underlying films respectively. After the first underlying film is exposed by etching the silicon oxide film using a first gas, the silicon oxide film is etched by using a second gas while depositing deposits on the first underlying film, and the silicon oxide film is etched by using a third gas while removing the deposits on the first underlying film. The etching using the second gas and the etching using the third gas are repeated multiple times.

公开(公告)号：US20220262601A1

公开(公告)日：2022-08-18

申请号：US17672217

申请日：2022-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiichi WATANABE ,  Manabu SATO ,  Masayuki SAWATAISHI ,  Hiroki YAMADA ,  Shinji ORIMO

IPC: H01J37/32

Abstract: An etching method includes (a) disposing a substrate having a silicon oxide film on a substrate support in a chamber. The substrate includes a plurality of etching stop layers arranged inside the silicon oxide film. The plurality of etching stop layers are arranged at different positions in a thickness direction of the silicon oxide film. Each of the plurality of etching stop layers is formed of at least one of tungsten and molybdenum. The etching method (b) supplying a processing gas into the chamber, the processing gas including a gas containing at least one of tungsten and molybdenum, a gas containing carbon and fluoride, and an oxygen-containing gas; and (c) generating plasma from the processing gas to etch the silicon oxide film, thereby forming a plurality of recesses that reach the plurality of etching stop layers, respectively, in the silicon oxide film.

公开(公告)号：US20210265170A1

公开(公告)日：2021-08-26

申请号：US17179436

申请日：2021-02-19

Applicant: Tokyo Electron Limited

Inventor： Seiichi WATANABE ,  Kazuki NARISHIGE ,  Xinhe Jerry LIM ,  Jianfeng XU ,  Yi Hao NG ,  Zhenkang Max LIANG ,  Yujun Nicholas LOO ,  Chiew Wah YAP ,  Bin ZHAO ,  Chai Jin CHUA ,  Takehito WATANABE ,  Koji KAWAMURA ,  Kenji KOMATSU ,  Li JIN ,  Wee Teck TAN ,  Dali LIU

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/768 ,  H01J37/32

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.