公开(公告)号：US20210271160A1

公开(公告)日：2021-09-02

申请号：US17323732

申请日：2021-05-18

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Akihito OKUMURA ,  Hiroaki MIYAJI ,  Takehiro YAMADA

IPC: G03F1/70 ,  G03F7/20 ,  G03F1/00 ,  G02F1/1335 ,  G03F1/76 ,  G03F7/00

Abstract: A photomask is used for scanning type projection exposure provided with a projection lens assembly composed of a lens assembly. A line width in a plurality of patterns of the photomask in a region to be transferred by performing scanning exposure including connecting portions of the lens assembly are corrected with respect to a line width of patterns which are the same as the patterns of the photomask present in a region to be transferred by performing scanning exposure but do not include the connecting portions.

公开(公告)号：US20200341387A1

公开(公告)日：2020-10-29

申请号：US16924569

申请日：2020-07-09

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Akihito OKUMURA ,  Hiroaki MIYAJI

IPC: G03F7/20 ,  G02F1/1335

Abstract: A photomask including a photomask body having a surface on which a mask pattern is formed and to be scanned and subjected to pattern transfer to a resist through a lens assembly including a connecting portion and a non-connecting portion. The mask pattern has a first region subjected to the pattern transfer at the connecting portion of the lens assembly and a second region subjected to the pattern transfer at the non-connecting portion. The mask pattern has, in at least one of the first and second regions, a corrected line width which is adjusted by calculation such that the resist is to have a target line width as designed. The corrected line width has a stepwise change in at least one of a scanning direction and a direction orthogonal to the scanning direction. The stepwise change is made by including a correction component based on a random number.

公开(公告)号：US20190155147A1

公开(公告)日：2019-05-23

申请号：US16252632

申请日：2019-01-19

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Akihito OKUMURA ,  Hiroaki MIYAJI ,  Takehiro YAMADA

IPC: G03F1/70 ,  G02F1/1335 ,  G03F7/20 ,  G03F7/00 ,  G03F1/76

Abstract: A photomask is used for scanning type projection exposure provided with a projection lens assembly composed of a lens assembly. A line width in a plurality of patterns of the photomask in a region to be transferred by performing scanning exposure including connecting portions of the lens assembly are corrected with respect to a line width of patterns which are the same as the patterns of the photomask present in a region to be transferred by performing scanning exposure but do not include the connecting portions.