公开(公告)号：US11467465B2

公开(公告)日：2022-10-11

申请号：US16415559

申请日：2019-05-17

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Tomoko Tsuruda ,  Mamoru Ishizaki

IPC: G02F1/167 ,  G02F1/1677 ,  G02F1/1335 ,  G02F1/157 ,  G02F1/153

Abstract: A reflective display apparatus including a reflective display portion which is two-dimensionally divided into pixels each having subpixels and changes reflectance of each subpixel based on an image signal, and colored layers facing the reflective display portion and partially overlapping the pixels as viewed in a facing direction in which the colored layers face the reflective display portion. The colored layers include traversing colored layers that overlap more than one of the subpixels as viewed in the facing direction, and the colored layers are positioned such that at most one of the colored layers overlaps one of the subpixels as viewed in the facing direction.

公开(公告)号：US10038014B2

公开(公告)日：2018-07-31

申请号：US14861059

申请日：2015-09-22

Applicant: Toppan Printing Co., Ltd.

Inventor： Mamoru Ishizaki

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/08

CPC classification number: H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/0847 ,  H01L29/41733

Abstract: A thin film transistor array including a gate wiring connected to a gate electrode and extended in a first direction, a source wiring connected to a source electrode, a drain electrode having a gap from the source electrode, a semiconductor pattern formed at least in a portion corresponding to the gap between the source and drain electrodes, the semiconductor pattern having a region defined by extending the portion in a second direction perpendicular to the first direction, and a pixel electrode that overlaps with a capacitor electrode in the planar view. In the planar view, the drain electrode has a shape of a single line, the source electrode has a first portion in a line shape and a second portion in a sheath shape surrounding the drain electrode and keeping a space from the drain electrode, and the source wiring is narrower than the region of the semiconductor pattern.

公开(公告)号：US11709406B2

公开(公告)日：2023-07-25

申请号：US17318194

申请日：2021-05-12

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Mamoru Ishizaki

IPC: G02F1/1368 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/136213 ,  G02F1/136277 ,  G02F1/136286

Abstract: A thin-film transistor array includes an insulating substrate and pixels each including a thin-film transistor, a pixel electrode, and a capacitor electrode, the pixels being formed in a matrix and located at positions where column wirings extending in a column direction intersect row wirings perpendicular to the column wirings and extending in a row direction. The thin-film transistor includes a gate electrode, a source electrode, a drain electrode, and a semiconductor pattern formed between the source electrode and the drain electrode. The pixel electrode includes two electrically conductive layers which are a lower layer electrode serving as a lower pixel electrode, and an upper layer electrode serving as an upper pixel electrode. The corresponding one of the column wirings is at a position which has no overlap with the capacitor electrode and the lower pixel electrode, and has an overlap with the upper pixel electrode, in the lamination direction.

公开(公告)号：US11264406B2

公开(公告)日：2022-03-01

申请号：US15706831

申请日：2017-09-18

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Mamoru Ishizaki

IPC: G02F1/1343 ,  H01L27/12 ,  H01L21/822 ,  H01L29/786 ,  G02F1/1362 ,  G09F9/35

Abstract: A thin-film transistor array including an insulating substrate, a gate insulating film sandwiched between a first structure and a second structure, the first structure including a gate electrode, a gate wire connected to the gate electrode, a capacitor electrode, and a capacitor wire connected to the capacitor electrode, and the second structure including a source electrode, a source wire connected to the source electrode, a drain electrode, and a pixel electrode connected to the drain electrode, a resistor inserted between parts of the capacitor wire, and a semiconductor layer formed between the source electrode and the drain electrode. The pixel electrode is positioned over the capacitor electrode with the gate insulating film positioned therebetween and has a storage capacitance, and the source electrode and the drain electrode are positioned over the gate electrode with the gate insulating film positioned therebetween.

公开(公告)号：US10141349B2

公开(公告)日：2018-11-27

申请号：US14980314

申请日：2015-12-28

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Mamoru Ishizaki

IPC: H01L27/12 ,  G09G3/34 ,  G09G3/36 ,  G02F1/1362

Abstract: A thin-film transistor array includes thin-film transistors each including an insulating substrate which is formed with a gate electrode, a gate wiring, a capacitor electrode and a capacitor wiring. A source electrode and a drain electrode having a gap therebetween and including a semiconductor pattern are formed, in a region overlapping with the gate electrode on the substrate via a gate insulator, with the semiconductor pattern being covered with a protective layer. Two such TFTs are independently formed for each pixel. In each pixel, two source electrodes are separately connected to two respective source wirings, and two drain electrodes are connected to an electrode of the pixel via individual drain-connecting electrodes. The array includes source-connecting electrodes each connecting between the source electrodes of the two TFTs formed for each pixel. The same drive waveform is applied to the two source wirings.

公开(公告)号：US10901288B2

公开(公告)日：2021-01-26

申请号：US16504019

申请日：2019-07-05

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Takehisa Takada ,  Mamoru Ishizaki

IPC: G02F1/1685 ,  G02F1/16761 ,  G02F1/16766 ,  G02F1/167 ,  G09G3/34 ,  G02F1/1675

Abstract: A display device including a pair of substrates having surfaces facing each other and electrodes formed on the surfaces, respectively, a display medium having a memory effect and formed between the pair of substrates, and a drive unit that applies a drive voltage to the display medium. The display medium includes charged particles encapsulated therein such that movement of the charged particles based on a voltage applied by the drive unit provides display, and the charged particles include first particles for displaying a first color with application of a first voltage, second particles for displaying a second color with application of a second voltage having a polarity different from a polarity of the first voltage, and third particles for displaying a third color with application of a third voltage which has the same polarity as the polarity of the first voltage and an absolute value smaller than an absolute value of the first voltage.

公开(公告)号：US20180061892A1

公开(公告)日：2018-03-01

申请号：US15790535

申请日：2017-10-23

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Hina CHUJO ,  Mamoru Ishizaki

IPC: H01L27/28 ,  H01L51/05 ,  H01L51/10 ,  H01L51/00

CPC classification number: H01L27/283 ,  H01L27/1292 ,  H01L27/3274 ,  H01L29/786 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/105 ,  H01L51/107

Abstract: A thin film transistor array formed substrate including a gate electrode, a gate insulation layer, a source wiring structure including a source wiring and a source electrode, a drain electrode, a pixel electrode connected to the drain electrode, a semiconductor layer formed in a stripe shape having a longitudinal side extending in a direction that the source wiring extends, and a protection layer formed to cover an entire portion of the semiconductor layer. The source wiring structure has notch portions positioned in the direction that the source wiring extends such that the notch portions overlap with the gate electrode, the source wiring has a first portion having a first width where the notch portions are formed and a second portion having a second width larger than the first width where no notch portions are formed, and the source wiring has an opening in the second portion.

公开(公告)号：US09530809B2

公开(公告)日：2016-12-27

申请号：US14664683

申请日：2015-03-20

Applicant: Toppan Printing Co., Ltd.

Inventor： Mamoru Ishizaki ,  Kaoru Hatta

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/788

CPC classification number: H01L27/1292 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/66825 ,  H01L29/788 ,  H01L2224/11

Abstract: A layered structure includes a first electrode layer on an insulating substrate, a first insulating film on the first electrode layer, a second electrode layer on the first insulating film, a second insulating film on the second electrode layer, and a third electrode layer on the second insulating film. The first electrode layer, an opening of the first insulating film, the second electrode layer, an opening of the second insulating film, and the third electrode layer have a stack structure that causes the first electrode layer and the second electrode layer to be connected. The third electrode layer relays or reinforces, through the opening of the second insulating film, a connection between the first electrode layer and the second electrode layer formed on the first insulating film.

Abstract translation: 分层结构包括绝缘基板上的第一电极层，第一电极层上的第一绝缘膜，第一绝缘膜上的第二电极层，第二电极层上的第二绝缘膜和第二绝缘膜上的第三电极层 第二绝缘膜。 第一电极层，第一绝缘膜的开口，第二电极层，第二绝缘膜的开口和第三电极层具有使第一电极层和第二电极层连接的堆叠结构。 第三电极层通过第二绝缘膜的开口继续或加强第一电极层和形成在第一绝缘膜上的第二电极层之间的连接。