Abstract:
The present invention provides a laminate film for temporary bonding which is excellent in heat resistance, capable of providing a flat film even at the periphery of a substrate, and capable of making a semiconductor circuit formation substrate and a support substrate or a support film layer adhere to each other with one type of adhesive, and which can be peeled off at room temperature under mild conditions. The present invention provides a laminate film for temporary bonding, including at least three layers of (A) a protective film layer, (B) an adhesive layer, and (C) a support film layer, wherein the adhesive layer (B) contains at least a siloxane polymer represented by a specific general formula or a compound represented by a specific general formula.
Abstract:
The present invention provides an adhesive composition having excellent strength in a cracked state, and is an adhesive composition characterized by containing a polyimide (A), polyfunctional epoxy compound (B), an epoxy curing agent (C), and inorganic particles (D), the ratio of the polyimide (A) in a nonvolatile organic component being 3.0 wt % or more and 30 wt % or less, the ratio of the epoxy curing agent (C) in the nonvolatile organic component being 0.5 wt % or more and 10 wt % or less, and T/M being 400 or more and 8000 or less, where T is the total number of grams of the nonvolatile organic component, and M is the number of moles of epoxy groups in the nonvolatile organic component.
Abstract:
The objective of the present invention is to obtain a semiconductor resin composition having a sufficiently low coefficient of linear expansion of the cured product thereof and a uniform distribution of inorganic particles in the direction of film thickness of a produced semi-cured film thereof. The semiconductor resin composition, which contains (a) an epoxy compound, (b) inorganic particles, (c) a polyimide, and (d) a solvent, is characterized by further containing (e) rubber particles and by the fraction of the (b) inorganic particles in the weight of the total solid fraction resulting from subtracting the weight of the (d) solvent from the total weight of the semiconductor resin composition being 60-92 wt % inclusive.