公开(公告)号：US20190067066A1

公开(公告)日：2019-02-28

申请号：US15915792

申请日：2018-03-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Fumiki AISO ,  Ryota FUJITSUKA ,  Kensei TAKAHASHI ,  Takayuki MATSUI ,  Tomohisa IINO

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/67 ,  H01L21/673 ,  B25J11/00 ,  B25J15/00

CPC classification number: H01L21/67745 ,  B25J11/0095 ,  B25J15/0014 ,  C23C16/44 ,  H01L21/67017 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67313 ,  H01L21/67748 ,  H01L21/68707

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container to contain wafers, and supporting tables provided in the container so as to be stacked on one another, and each including a supporting face that comes into contact with a wafer to support the wafer. The apparatus further includes supporting columns to join the supporting tables together and provided at positions where the supporting columns are contained inside outer circumferences of the supporting tables. The apparatus further includes a gas feeder to feed a gas to the wafers on the supporting tables, and a gas discharger to discharge the gas fed to the wafers on the supporting tables. Each of the supporting tables includes a first upper face as the supporting face, and a second upper face provided so as to surround the first upper face at a level higher than a level of the first upper face.

公开(公告)号：US20200294861A1

公开(公告)日：2020-09-17

申请号：US16559390

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Junya FUJITA ,  Ryota FUJITSUKA

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/49

Abstract: According to one embodiment, a semiconductor device includes: a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode film, provided on the gate insulating film, that includes boron; a side wall insulating film extending along a side surface of the gate electrode film; a barrier film including a first portion provided between the side surface of the gate electrode film and the side wall insulating film, and a second portion, connected to the first portion, that is provided between the gate insulating film and a bottom surface of the side wall insulating film. The barrier film includes carbon as a main component to limit diffusion of the boron in the gate electrode film.

公开(公告)号：US20180277406A1

公开(公告)日：2018-09-27

申请号：US15699727

申请日：2017-09-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koji NAKAHARA ,  Tomohisa IINO ,  Ryota FUJITSUKA

IPC: H01L21/67 ,  H01L21/673

CPC classification number: H01L21/67207 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/00 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67346

Abstract: According to an embodiment, a substrate treatment apparatus includes a vacuum chamber, a cylindrical member, a gas feed member, a support member and a plurality of plate members. The cylindrical member is disposed in the vacuum chamber and includes a gas outlet. The support member supports a plurality of treated substrates in a stacked state in the cylindrical member. The plurality of plate members are supported on the support member and include a patterned surface or an outer circumferential part outside the treated substrate.