公开(公告)号：US20210340066A1

公开(公告)日：2021-11-04

申请号：US17244247

申请日：2021-04-29

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: C04B35/44

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

公开(公告)号：US20180354859A1

公开(公告)日：2018-12-13

申请号：US16107237

申请日：2018-08-21

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Masakatsu KIYOHARA

IPC: C04B35/515 ,  H01J37/32 ,  C04B35/553 ,  C04B35/622

CPC classification number: C04B35/5156 ,  C04B35/553 ,  C04B35/62218 ,  C04B35/62222 ,  C04B2235/3225 ,  C04B2235/445 ,  C04B2235/76 ,  C04B2235/781 ,  C04B2235/9669 ,  H01J37/32495

Abstract: According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has a rhombohedral crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity of rhombohedron detected near diffraction angle 2θ=13.8° by X-ray diffraction as r1, taking a peak intensity of rhombohedron detected near diffraction angle 2θ=36.1° as r2, and taking a proportion γ1 as γ1(%)=r2/r1×100, the proportion γ1 is not less than 0% and less than 100%.

公开(公告)号：US20180362411A1

公开(公告)日：2018-12-20

申请号：US16112020

申请日：2018-08-24

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Masakatsu KIYOHARA

IPC: C04B35/515 ,  H01J37/32

Abstract: A structure includes a polycrystalline substance of yttrium fluoride, wherein an average crystallite size in the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2θ=24.3° by X-ray diffraction as α, and taking a peak intensity detected near diffraction angle 2θ=25.7° as β, a peak intensity ratio α/β of the structure is not less than 0% and less than 100%.

公开(公告)号：US20180127319A1

公开(公告)日：2018-05-10

申请号：US15716847

申请日：2017-09-27

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Masakatsu KIYOHARA

IPC: C04B35/515 ,  H01J37/32

CPC classification number: C04B35/5156 ,  C04B2235/445 ,  C04B2235/76 ,  C04B2235/781 ,  H01J37/32495

Abstract: According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has an orthorhombic crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2θ=32.0° by X-ray diffraction as γ, and taking a peak intensity detected near diffraction angle 2θ=32.8° as δ, a peak intensity ratio γ/δ is not less than 0% and not more than 150%.

公开(公告)号：US20240166567A1

公开(公告)日：2024-05-23

申请号：US18282857

申请日：2022-03-17

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: C04B35/44 ,  C23C24/04

CPC classification number: C04B35/44 ,  C04B2235/3218 ,  C04B2235/781 ,  C23C24/04

Abstract: Disclosed are a composite structure, which is able to enhance low-particle generation so that this can be used as a member for a semiconductor manufacturing device, and a semiconductor manufacturing device provided with the composite structure. The composite structure has a substrate and a structure that is provided on the substrate and has a surface, in which the structure contains Y4Al2O9 as a main component, and an indentation hardness thereof is greater than 6.0 GPa, thereby having excellent low-particle generation, so that this may be suitably used as a member for a semiconductor manufacturing device.

公开(公告)号：US20240170264A1

公开(公告)日：2024-05-23

申请号：US18282839

申请日：2022-03-17

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: H01J37/32 ,  C04B35/44

CPC classification number: H01J37/32467 ,  C04B35/44 ,  H01J37/32495 ,  C04B2235/761

Abstract: Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.

公开(公告)号：US20250101597A1

公开(公告)日：2025-03-27

申请号：US18730081

申请日：2023-02-13

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: C23C24/04 ,  H01J37/32

Abstract: Disclosed is a composite structure having low-particle generation usable for a member for a semiconductor manufacturing apparatus and also the semiconductor manufacturing apparatus. The composite structure including a base material and a structure that is provided on the base material wherein the structure comprises Y2O3—ZrO2 solid solution (YZrO) as a main component, and lattice constant of the YZrO is 5.252 Å or greater or has an indentation hardness of more than 12 GPa. has low-particle generation and is suitably used as a member for a semiconductor apparatus.

公开(公告)号：US20210343511A1

公开(公告)日：2021-11-04

申请号：US17244299

申请日：2021-04-29

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 Å: a=d·(h2+k2+l2)1/2  (1) where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus.

公开(公告)号：US20190276368A1

公开(公告)日：2019-09-12

申请号：US16296934

申请日：2019-03-08

Applicant: TOTO LTD.

Inventor： Junichi IWASAWA ,  Hiroaki ASHIZAWA ,  Takuma WADA ,  Ryoto TAKIZAWA ,  Toshihiro AOSHIMA ,  Yuuki TAKAHASHI ,  Atsushi KINJO

IPC: C04B35/505 ,  H01L21/67 ,  C01F17/00 ,  C01B11/24 ,  C01F7/02 ,  C01G25/02 ,  C04B35/622 ,  H01J37/28

Abstract: Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.

公开(公告)号：US20180127320A1

公开(公告)日：2018-05-10

申请号：US15716865

申请日：2017-09-27

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Masakatsu KIYOHARA

IPC: C04B35/515 ,  H01J37/32

CPC classification number: C04B35/5156 ,  C04B35/553 ,  C04B35/62218 ,  C04B35/62222 ,  C04B2235/3225 ,  C04B2235/445 ,  C04B2235/76 ,  C04B2235/781 ,  C04B2235/9669 ,  H01J37/32495

Abstract: According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has a rhombohedral crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity of rhombohedron detected near diffraction angle 2θ=13.8° by X-ray diffraction as r1, taking a peak intensity of rhombohedron detected near diffraction angle 2θ=36.1° as r2, and taking a proportion γ1 as γ1(%)=r2/r1×100, the proportion γ1 is not less than 0% and less than 100%.