公开(公告)号：US11929233B2

公开(公告)日：2024-03-12

申请号：US17553875

申请日：2021-12-17

Applicant: TRUMPF Huettinger Sp. z o. o.

Inventor： Jakub Swiatnicki ,  Krzysztof Ruda ,  Mateusz Wiosna ,  Grzegorz Toczylowski ,  Jialei Chen

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32568 ,  H01J37/32935

Abstract: A method adjusts an output power of a power supply supplying electrical power to a plasma in a plasma chamber. The method includes: connecting the power supply to at least one electrode in the plasma chamber; transporting one or more substrates relative to the electrode using a substrate carrier; maintaining the plasma by the electrical power; processing the one or more substrates with the plasma; and adjusting the output power based on a parameter related to a distance between a surface of the electrode facing a carrier-substrate-assembly and a surface of the substrate-carrier-assembly facing the electrode.

公开(公告)号：US20220115207A1

公开(公告)日：2022-04-14

申请号：US17553875

申请日：2021-12-17

Applicant: TRUMPF Huettinger Sp. z o. o.

Inventor： Jakub Swiatnicki ,  Krzysztof Ruda ,  Mateusz Wiosna ,  Grzegorz Toczylowski ,  Jialei Chen

IPC: H01J37/32

Abstract: A method adjusts an output power of a power supply supplying electrical power to a plasma in a plasma chamber. The method includes: connecting the power supply to at least one electrode in the plasma chamber; transporting one or more substrates relative to the electrode using a substrate carrier; maintaining the plasma by the electrical power; processing the one or more substrates with the plasma; and adjusting the output power based on a parameter related to a distance between a surface of the electrode facing a carrier-substrate-assembly and a surface of the substrate-carrier-assembly facing the electrode.