公开(公告)号：US20150194567A1

公开(公告)日：2015-07-09

申请号：US13834055

申请日：2013-03-15

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/32 ,  H01L33/46 ,  H01L33/06 ,  H01L33/24

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/0079

Abstract: The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers.

Abstract translation: 本公开提供了制造发光二极管（LED）装置的方法的一个实施例。 该方法包括在第一基板上形成纳米掩模层，其中纳米掩模层具有随机布置的晶粒图案; 在第一衬底中生长第一外延半导体层，形成纳米复合层; 在纳米复合层上生长许多外延半导体层; 从所述外延半导体层的第一侧将第二衬底接合到所述外延半导体层; 向纳米复合层施加辐射能; 以及从所述外延半导体层的第二侧将所述第一衬底与所述外延半导体层分离。

公开(公告)号：US09117968B2

公开(公告)日：2015-08-25

申请号：US13834055

申请日：2013-03-15

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC: H01L33/00 ,  H01L33/20

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/0079

Abstract: A light-emitting diode structure includes an AuSn or AuIn-containing bonding layer over a substrate, a metal layer disposed over the bonding layer, a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer, a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer, a multiple quantum well structure disposed between the n-GaN and p-GaN layers, and a conductive contact disposed on the n-GaN layer. The n-GaN layer includes a rough surface with randomly distributed dips. The nano-sized dips have diameters distributed between about 100 nm and about 600 nm, have a dip density ranging from about 107 grains/cm2 to about 109 grains/cm2, and are spaced from each other with an average spacing S, average diameter D, and a ratio S/D that ranges between about 1.1 and about 1.5. The conductive contact is disposed on some of the nano-sized dips of the rough surface.

Abstract translation: 发光二极管结构包括在衬底上的AuSn或含AuIn的结合层，设置在所述接合层上的金属层，设置在所述金属层上的p型掺杂的氮化镓（p-GaN）层， 掺杂氮化镓（n-GaN）层近似于p-GaN层，设置在n-GaN和p-GaN层之间的多量子阱结构和设置在n-GaN层上的导电接触。 n-GaN层包括具有随机分布的凹陷的粗糙表面。 纳米尺寸浸渍剂的直径分布在约100nm至约600nm之间，浸渍密度范围为约107粒/ cm 2至约109粒/ cm 2，并且以平均间隔S，平均直径D ，S / D的范围为约1.1至约1.5。 导电触点设置在粗糙表面的一些纳米尺寸的凹部上。

公开(公告)号：US20140021483A1

公开(公告)日：2014-01-23

申请号：US14038881

申请日：2013-09-27

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

Abstract: A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

Abstract translation: 种子层，用于生长嵌入在载体基底上的电介质材料中的基团111-V半导体结构1s。 在组111-V半导体结构生长之后，通过湿蚀刻去除电介质材料以分离载体衬底。 组111-V半导体结构包括至少100微米的厚氮化镓层或发光结构。

公开(公告)号：US09065015B2

公开(公告)日：2015-06-23

申请号：US14038881

申请日：2013-09-27

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

IPC: H01L33/32 ,  H01L33/30 ,  H01L21/02 ,  H01L33/00 ,  H01L33/12 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.

Abstract translation: 一种器件包括：衬底; 设置在所述基板上的III-V族半导体层; 以及设置在III-V族半导体层上的籽晶层。 基板是印刷电路板。 III-V族半导体层包括多量子阱（MQW）层，p型掺杂层和n型掺杂层。 种子层包括多个微型元件。 微型元件各自含有适于外延生长III-V族III族半导体层的单晶材料。 微型元件共同覆盖III-V族III族半导体层的表面的100％以下。

公开(公告)号：US20150108424A1

公开(公告)日：2015-04-23

申请号：US14057053

申请日：2013-10-18

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/38

Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.

Abstract translation: 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。