公开(公告)号：US20210111299A1

公开(公告)日：2021-04-15

申请号：US16897742

申请日：2020-06-10

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0304

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

公开(公告)号：US11195968B2

公开(公告)日：2021-12-07

申请号：US16897742

申请日：2020-06-10

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0304

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

公开(公告)号：US10714651B2

公开(公告)日：2020-07-14

申请号：US16170500

申请日：2018-10-25

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L21/02 ,  H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0304

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

公开(公告)号：US20200135958A1

公开(公告)日：2020-04-30

申请号：US16170500

申请日：2018-10-25

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/02 ,  H01L31/18 ,  H01L31/036

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.