公开(公告)号：US20140159039A1

公开(公告)日：2014-06-12

申请号：US14104762

申请日：2013-12-12

Applicant: The Hong Kong University of Science and Technology

Inventor： Hoi Sing KWOK ,  Meng ZHANG ,  Shuming CHEN ,  Wei ZHOU ,  Man WONG

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/6675 ,  H01L29/78675

Abstract: A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary.

Abstract translation: 薄膜晶体管包括：源极区; 漏区; 以及连接到源区和漏区的多晶薄膜有源沟道区，所述有源沟道区包含晶粒并掺杂有包括多个掺杂区的二维图案，所述多个掺杂区各自包括至少部分 的多个晶粒和至少一个晶界。