公开(公告)号：US20180248118A1

公开(公告)日：2018-08-30

申请号：US15753519

申请日：2016-08-17

Applicant: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hoi Sing KWOK ,  Guijun LI ,  Yeuk Lung Jacob HO ,  Man WONG

IPC: H01L51/00 ,  H01G9/00 ,  H01G9/20 ,  H01L51/42 ,  H01L51/44 ,  H01L51/52 ,  H01L51/50

CPC classification number: H01L51/001 ,  H01G9/0029 ,  H01G9/2004 ,  H01L51/0032 ,  H01L51/0077 ,  H01L51/42 ,  H01L51/4226 ,  H01L51/4273 ,  H01L51/442 ,  H01L51/5032 ,  H01L51/5296 ,  Y02E10/549

Abstract: A method of fabricating a hybrid organic-inorganic halide perovskite film includes depositing a precursor layer onto a substrate, the precursor layer comprising metal halide, placing an organic source-material layer onto a boat, the organic source-material layer comprising an organic cation, and annealing the precursor layer and the organic source-material layer in a vacuum chamber enclosed in a constrained volume.

公开(公告)号：US20130221495A1

公开(公告)日：2013-08-29

申请号：US13721496

申请日：2012-12-20

Applicant: The Hong Kong University of Science and Technology

Inventor： Man WONG ,  Fan ZENG

IPC: H01L21/461 ,  H01L29/16

CPC classification number: H01L21/461 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00828 ,  B01J2219/00837 ,  B01J2219/0086 ,  B01L3/502707 ,  B01L2300/0816 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0116 ,  B81C2201/0178 ,  H01L29/16

Abstract: Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.

Abstract translation: 这里描述的是形成在硅衬底的表面下方并平行于其的表面的微通道。 利用硅迁移技术形成埋在硅衬底表面下方的微通道。 蚀刻打开微通道的至少一端。 通过微通道的开口端利用氧化，以促进微通道的受控直径。

公开(公告)号：US20140159039A1

公开(公告)日：2014-06-12

申请号：US14104762

申请日：2013-12-12

Applicant: The Hong Kong University of Science and Technology

Inventor： Hoi Sing KWOK ,  Meng ZHANG ,  Shuming CHEN ,  Wei ZHOU ,  Man WONG

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/6675 ,  H01L29/78675

Abstract: A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary.

Abstract translation: 薄膜晶体管包括：源极区; 漏区; 以及连接到源区和漏区的多晶薄膜有源沟道区，所述有源沟道区包含晶粒并掺杂有包括多个掺杂区的二维图案，所述多个掺杂区各自包括至少部分 的多个晶粒和至少一个晶界。