公开(公告)号：US11281116B2

公开(公告)日：2022-03-22

申请号：US17204161

申请日：2021-03-17

Applicant: Tokyo Electron Limited

Inventor： Einosuke Tsuda ,  Daisuke Toriya ,  Satoshi Yonekura ,  Satoshi Takeda ,  Motoshi Fukudome ,  Kyoko Ikeda

IPC: G03B27/52 ,  G03F7/20

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

公开(公告)号：US10094019B2

公开(公告)日：2018-10-09

申请号：US14074302

申请日：2013-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Toriya ,  Eiichi Komori ,  Manabu Amikura

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  C23C16/44

Abstract: A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member.

公开(公告)号：US11441224B2

公开(公告)日：2022-09-13

申请号：US16775520

申请日：2020-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Toriya ,  Yuichi Furuya ,  Toshiaki Fujisato

IPC: C23C16/458 ,  C23C16/46

Abstract: A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.

公开(公告)号：US11280002B2

公开(公告)日：2022-03-22

申请号：US16574977

申请日：2019-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi Satoh ,  Toshiaki Fujisato ,  Daisuke Toriya

IPC: C23C16/458

Abstract: A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.

公开(公告)号：US10156014B2

公开(公告)日：2018-12-18

申请号：US15843551

申请日：2017-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Kakegawa ,  Yuichi Furuya ,  Daisuke Toriya

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/06 ,  H01L21/687

Abstract: A gas treatment apparatus includes: a mounting part of a substrate; a gas diffusion plate of a processing gas; gas dispersion parts forming a diffusion space of the processing gas between the gas dispersion parts and the gas diffusion plate; and a flow path having an upstream side forming a common flow path of the gas dispersion parts and a downstream side connected to each of the gas dispersion parts, lengths from the common flow path to respective of the gas dispersion parts being aligned, wherein centers of the gas dispersion parts are located around a central portion of the diffusion space, and the gas dispersion parts are arranged along first circles with two or more of the gas dispersion parts arranged on each of the first circles and distances from the central portion of the diffusion space to the centers of gas dispersion parts being different from one another.

公开(公告)号：US11466365B2

公开(公告)日：2022-10-11

申请号：US16456794

申请日：2019-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Toriya ,  Toshiaki Fujisato ,  Yuichi Furuya

IPC: C23C16/46 ,  C23C16/44 ,  H01L21/687 ,  C23C16/448

Abstract: There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.

公开(公告)号：US10526702B2

公开(公告)日：2020-01-07

申请号：US15243048

申请日：2016-08-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Toriya ,  Eiichi Komori ,  Manabu Amikura

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/687 ,  C23C16/44

Abstract: A film forming apparatus includes: a mounting table that is lifted/lowered between a processing location and a delivery location below the processing location; an encompassing member for encompassing the mounting table positioned at the processing location and to divide an inside of a processing container into a processing space of an upper space and a space of a lower side; an exhaust part for evacuating the inside of the processing container through the processing space; a purge gas supply unit configured to supply a purge gas to the lower side space; a clamp ring stacked on an upper surface of the encompassing member when the mounting table is positioned at the delivery location; and a guiding part formed at the encompassing member to be extended between an upper side of the mounting table and a lower side of the clamp ring and to guide a flow of the purge gas.

公开(公告)号：US10221478B2

公开(公告)日：2019-03-05

申请号：US14787860

申请日：2014-02-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kensaku Narushima ,  Daisuke Toriya ,  Kentaro Asakura ,  Seishi Murakami

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/458 ,  C23C16/44 ,  H01L21/687 ,  C23C16/34 ,  C23C16/455

Abstract: A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.