公开(公告)号：US11761075B2

公开(公告)日：2023-09-19

申请号：US15781242

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa Saito ,  Toshiki Hinata ,  Kazuya Dobashi ,  Kyoko Ikeda ,  Shuji Moriya

IPC: H01L21/67 ,  C23C14/02 ,  H01L21/687 ,  C23C16/458 ,  C23C16/44 ,  C23C16/02 ,  A47L5/14 ,  B08B13/00 ,  B08B5/00 ,  H01L21/304 ,  C23C14/50 ,  C23C14/56 ,  H01L21/02

CPC classification number: C23C14/022 ,  A47L5/14 ,  B08B5/00 ,  B08B13/00 ,  C23C14/021 ,  C23C14/505 ,  C23C14/564 ,  C23C16/02 ,  C23C16/0227 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4584 ,  H01L21/02041 ,  H01L21/304 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67028 ,  H01L21/68714 ,  H01L21/68764 ,  H01L21/68785 ,  B08B2205/00

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

公开(公告)号：US09343295B2

公开(公告)日：2016-05-17

申请号：US14281242

申请日：2014-05-19

Applicant: Tokyo Electron Limited

Inventor： Ikuo Sawada ,  Sumie Nagaseki ,  Kyoko Ikeda ,  Tatsuro Ohshita

IPC: H01H21/02 ,  H01L21/02 ,  C23C16/448 ,  H01L21/316 ,  H01L21/318

CPC classification number: H01L21/02271 ,  C23C16/4486 ,  H01L21/02181 ,  H01L21/31612 ,  H01L21/31645 ,  H01L21/3185

Abstract: A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.

Abstract translation: 蒸发单元在将通过将液体材料蒸发到基板上以进行成膜处理而生成的气体材料的情况下，可以高效率地蒸发液体材料，以抑制颗粒的产生。 利用蒸发单元，在液体材料中产生直径为1000nm以下的带正电荷或带负电荷的泡沫，液体材料被雾化以形成液体材料的雾。 此外，液体材料的雾被加热和蒸发。 微细气泡预先均匀地分散在液体材料中，从而当液体材料雾化时产生液体材料的非常细小且均匀的雾状颗粒，这使得热交换容易进行。 通过蒸发液体材料的雾，提高了蒸发效率，并且可以抑制颗粒的产生。

公开(公告)号：US10786837B2

公开(公告)日：2020-09-29

申请号：US15779894

申请日：2016-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa Saito ,  Toshiki Hinata ,  Kazuya Dobashi ,  Kyoko Ikeda ,  Shuji Moriya

IPC: B08B9/00 ,  H01L21/67 ,  H01L21/02 ,  H01L21/687 ,  C23C16/455 ,  C23C16/44 ,  B08B5/02

Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).

公开(公告)号：US11865590B2

公开(公告)日：2024-01-09

申请号：US18048102

申请日：2022-10-20

Applicant: Tokyo Electron Limited

Inventor： Kyoko Ikeda ,  Kazuya Dobashi ,  Tsunenaga Nakashima ,  Kenji Sekiguchi ,  Shuuichi Nishikido ,  Masato Nakajo ,  Takahiro Yasutake

IPC: B08B5/02 ,  H01L21/02

CPC classification number: B08B5/02 ,  H01L21/02041

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US11504751B2

公开(公告)日：2022-11-22

申请号：US17295971

申请日：2019-11-20

Applicant: Tokyo Electron Limited

Inventor： Kyoko Ikeda ,  Kazuya Dobashi ,  Tsunenaga Nakashima ,  Kenji Sekiguchi ,  Shuuichi Nishikido ,  Masato Nakajo ,  Takahiro Yasutake

IPC: H01L21/02 ,  B08B5/02

Abstract: A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US09939200B2

公开(公告)日：2018-04-10

申请号：US14948673

申请日：2015-11-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koyu Hasegawa ,  Kyoko Ikeda

IPC: F27D3/00 ,  H01L21/47

CPC classification number: F27D3/0084 ,  F27D2003/0086 ,  H01L21/47 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/67766 ,  H01L21/67781

Abstract: A substrate transfer system includes a substrate transfer part capable of transferring a substrate while holding the substrate, an elevating mechanism including a support axis extending in an upper-lower direction and being capable of moving the substrate transfer part along the support axis within a predetermined range, a first exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis above an upper limit of the predetermined range, a second exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis below a lower limit of the predetermined range, and an exhaust part connected such that exhaust is available through the first exhaust port and the second exhaust port.

公开(公告)号：US11517943B2

公开(公告)日：2022-12-06

申请号：US17258431

申请日：2019-07-01

Applicant: Tokyo Electron Limited

Inventor： Kyoko Ikeda ,  Kazuya Dobashi

IPC: B08B7/02 ,  B08B5/02 ,  B08B13/00 ,  C23C16/44

Abstract: A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

公开(公告)号：US11281116B2

公开(公告)日：2022-03-22

申请号：US17204161

申请日：2021-03-17

Applicant: Tokyo Electron Limited

Inventor： Einosuke Tsuda ,  Daisuke Toriya ,  Satoshi Yonekura ,  Satoshi Takeda ,  Motoshi Fukudome ,  Kyoko Ikeda

IPC: G03B27/52 ,  G03F7/20

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

公开(公告)号：US20140256157A1

公开(公告)日：2014-09-11

申请号：US14281242

申请日：2014-05-19

Applicant: Tokyo Electron Limited

Inventor： Ikuo SAWADA ,  Sumie Nagaseki ,  Kyoko Ikeda

IPC: H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/4486 ,  H01L21/02181 ,  H01L21/31612 ,  H01L21/31645 ,  H01L21/3185

Abstract: A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.

Abstract translation: 蒸发单元在将通过将液体材料蒸发到基板上以进行成膜处理而生成的气体材料的情况下，可以高效率地蒸发液体材料，以抑制颗粒的产生。 利用蒸发单元，在液体材料中产生直径为1000nm以下的带正电荷或带负电荷的泡沫，液体材料被雾化以形成液体材料的雾。 此外，液体材料的雾被加热和蒸发。 微细气泡预先均匀地分散在液体材料中，从而当液体材料雾化时产生液体材料的非常细小且均匀的雾状颗粒，这使得热交换容易进行。 通过蒸发液体材料的雾，提高了蒸发效率，并且可以抑制颗粒的产生。