公开(公告)号：US10700009B2

公开(公告)日：2020-06-30

申请号：US16147928

申请日：2018-10-01

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Nicholas Joy ,  Eric Chih Fang Liu ,  David L. O'Meara ,  David Rosenthal ,  Masanobu Igeta ,  Cory Wajda ,  Gerrit J. Leusink

IPC: H01L21/283 ,  H01L23/532 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  C23C16/16 ,  C23C16/56 ,  C23C16/455 ,  C23C16/04 ,  H01L23/522 ,  H01L21/321

Abstract: A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.

公开(公告)号：US20190103363A1

公开(公告)日：2019-04-04

申请号：US16147928

申请日：2018-10-01

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Nicholas Joy ,  Eric Chih Fang Liu ,  David L. O'Meara ,  David Rosenthal ,  Masanobu Igeta ,  Cory Wajda ,  Gerrit J. Leusink

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  C23C16/455 ,  C23C16/16 ,  C23C16/56

Abstract: A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.