Abstract:
A film forming device forms a thin film on a substrate by reacting reaction gases in a process vessel. Electrode portions each oriented vertically are arranged to be spaced from each other in a horizontal direction. By applying high-frequency powers having different phases to adjacent electrode portions, a strong plasma generation space is formed above the substrate placed on a mounting table, while a weak plasma generation space is formed in the gap between the electrode portions and the substrate. A first reaction gas is supplied to the strong plasma generation space and a second reaction gas that forms the thin film by reacting with the active species of the first reaction gas is supplied to the weak plasma generation space. The reaction gases in the weak plasma generation space are discharged through exhaust channels.
Abstract:
A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.