公开(公告)号：US09583330B2

公开(公告)日：2017-02-28

申请号：US14283874

申请日：2014-05-21

Applicant: Tokyo Electron Limited

Inventor： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC: F26B3/00 ,  H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/02 ,  H01L21/67

CPC classification number: H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

Abstract: A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract translation: 公开了一种用于半导体衬底的超临界干燥方法。 该方法可以包括将半导体衬底以半导体衬底的醇湿润的状态引入半导体衬底，用二氧化碳的超临界流体代替半导体衬底上的醇，通过将半导体衬底浸渍到超临界流体中 并且从室中排出超临界流体和醇，并减小室内的压力。 该方法还可以包括在室内压力降低之后，向室内供给氧气或臭氧气体进行烘烤处理。