公开(公告)号：US10651061B2

公开(公告)日：2020-05-12

申请号：US16163918

申请日：2018-10-18

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Takao Inada ,  Hisashi Kawano

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311

Abstract: A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.

公开(公告)号：US20150258465A1

公开(公告)日：2015-09-17

申请号：US14644458

申请日：2015-03-11

Applicant: Tokyo Electron Limited

Inventor： Kazuyuki Mitsuoka ,  Hiroki Ohno ,  Takehiko Orii ,  Takayuki Toshima

IPC: B01D3/02 ,  H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/02057 ,  H01L21/02101

Abstract: Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water.

Abstract translation: 公开了一种分离再生装置，其特征在于，包括：超临界处理装置，其构成为，生成包含第一沸点的第一含氟有机溶剂和第二含氟有机溶剂的混合气体，所述第二含氟有机溶剂的第二沸点低于第一沸点 点; 以及蒸馏罐，其被配置为存储温度在第一沸点和第二沸点之间的温度，其中混合气体以液态输入到要分离成热的第一含氟有机溶剂的热水中， 在气体状态下设置第二含氟有机溶剂，其中将从超临界处理单元引导混合气体的引入管线设置到蒸馏罐，并且引入管线的远端设置在热水中。

公开(公告)号：US10395950B2

公开(公告)日：2019-08-27

申请号：US15801803

申请日：2017-11-02

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiromi Kiyose ,  Takuro Masuzumi ,  Hiroki Ohno ,  Kento Tsukano ,  Hiroshi Marumoto ,  Shotaro Kitayama

IPC: B01J3/00 ,  B01J3/06 ,  B08B7/00 ,  H01L21/02 ,  H01L21/67

Abstract: A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. In the circulation process, the processing fluid is supplied into the processing container from the second fluid supply unit.

公开(公告)号：US20190148183A1

公开(公告)日：2019-05-16

申请号：US16164919

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Hisashi Kawano ,  Hiroki Ohno

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/66

Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.

公开(公告)号：US20190096711A1

公开(公告)日：2019-03-28

申请号：US16144016

申请日：2018-09-27

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Hideaki Sato ,  Takao Inada ,  Hisashi Kawano ,  Yoshinori Nishiwaki ,  Takahiko Otsu

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate processing apparatus and a substrate processing method capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a substrate processing tub, a phosphoric acid processing liquid supply unit, a circulation path, a SiO2 precipitation inhibitor supply unit and a mixing unit. The phosphoric acid processing liquid supply unit is configured to supply a phosphoric acid processing liquid used in performing an etching processing in the substrate processing tub. The circulation path is configured to circulate the phosphoric acid processing liquid supplied into the substrate processing tub. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor into the circulation path. The mixing unit is configured to mix a silicon-containing compound into the phosphoric acid processing liquid before the phosphoric acid processing liquid is supplied into the circulation path.

公开(公告)号：US20180254200A1

公开(公告)日：2018-09-06

申请号：US15907522

申请日：2018-02-28

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Gentaro Goshi ,  Keisuke Egashira ,  Hiroki Ohno ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Shotaro Kitayama

IPC: H01L21/67 ,  F26B5/00 ,  H01L21/02

CPC classification number: H01L21/67034 ,  F26B5/00 ,  F26B5/005 ,  F26B21/14 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67051 ,  H01L21/67173

Abstract: A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.

公开(公告)号：US20180138035A1

公开(公告)日：2018-05-17

申请号：US15814592

申请日：2017-11-16

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Keisuke Egashira ,  Gentaro Goshi ,  Yosuke Kawabuchi ,  Shotaro Kitayama ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Hiromi Kiyose

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6719

Abstract: During at least part of a time period for a pressure increasing step of increasing a pressure inside a processing container from a pressure lower than a critical pressure of a processing fluid to a pressure higher than the critical pressure, pressure increasing is performed by supplying the processing fluid into the processing container from a fluid supply source while discharging the processing fluid from the processing container at a controlled discharge flow rate. Particles attached to the surfaces of members inside the processing container travel upward by the supply of the processing fluid into the processing container from the fluid supply source. The particles are discharged along with the processing fluid from the processing container.

公开(公告)号：US09583330B2

公开(公告)日：2017-02-28

申请号：US14283874

申请日：2014-05-21

Applicant: Tokyo Electron Limited

Inventor： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC: F26B3/00 ,  H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/02 ,  H01L21/67

CPC classification number: H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

Abstract: A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract translation: 公开了一种用于半导体衬底的超临界干燥方法。 该方法可以包括将半导体衬底以半导体衬底的醇湿润的状态引入半导体衬底，用二氧化碳的超临界流体代替半导体衬底上的醇，通过将半导体衬底浸渍到超临界流体中 并且从室中排出超临界流体和醇，并减小室内的压力。 该方法还可以包括在室内压力降低之后，向室内供给氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20170011907A1

公开(公告)日：2017-01-12

申请号：US15201942

申请日：2016-07-05

Applicant: Tokyo Electron Limited

Inventor： Kazuyuki Mitsuoka ,  Hiroki Ohno ,  Gentaro Goshi ,  Hisashi Kawano

IPC: H01L21/02

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67248

Abstract: Disclosed is a substrate processing method including: supplying a first solvent including a fluorine-free organic solvent, to a workpiece; supplying a second solvent including a fluorine-containing organic solvent that is not dissolved with the first solvent at a normal temperature, and is dissolved with the first solvent at a temperature higher than the normal temperature; and replacing the first solvent with the second solvent while dissolving the first solvent and the second solvent by heating the first solvent and the second solvent to a dissolution temperature or higher.

Abstract translation: 公开了一种基板处理方法，包括：向工件供给包含无氟有机溶剂的第一溶剂; 在常温下供给含有与第一溶剂不溶解的含氟有机溶剂的第二溶剂，并在高于常温的温度下与第一溶剂溶解; 并用第二溶剂代替第一溶剂，同时通过将第一溶剂和第二溶剂加热至第一溶剂和第二溶剂至溶解温度或更高。

公开(公告)号：US10923368B2

公开(公告)日：2021-02-16

申请号：US16164919

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Hisashi Kawano ,  Hiroki Ohno

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/311

Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.