公开(公告)号：US20250076757A1

公开(公告)日：2025-03-06

申请号：US18462003

申请日：2023-09-06

Applicant: Tokyo Electron Limited

Inventor： Ankur AGARWAL ,  Michael CARCASI

IPC: G03F7/004

Abstract: A method for fabricating a semiconductor device with organometallic based photoresists and commercial extreme ultraviolet photolithography. The method for fabricating a semiconductor device includes applying organometallic based photoresist to a substrate and exposing the organometallic based photoresist to extreme ultraviolet photolithography. The method may include introducing an additive to the organometallic based photoresist to promote at least one of adhesion, passivation, reactivity and cross-linking of components in the organometallic based photoresist. The method may also include exposing the organometallic based photoresist to microwave radiation. The microwave radiation may couple with molecular motions, such as internal rotations, to enhance organometallic based photoresist cluster mobility or reorientations. In addition, microwave radiation may induce charge polarization and eddy currents in materials, resulting in induced electron transport and heating due to resistive losses.

公开(公告)号：US20250102738A1

公开(公告)日：2025-03-27

申请号：US18475944

申请日：2023-09-27

Applicant: Tokyo Electron Limited

Inventor： Ryan BURNS ,  Michael CARCASI ,  Robert BRANDT

IPC: G02B6/34 ,  G02B27/01

Abstract: Aspects of the present disclosure provide a method for fabricating a grating coupler. For example, the method can include providing a substrate, forming a plurality of grating elements and a photosensitive material above the substrate, and projecting actinic radiation of varied intensities to expose different regions of the photosensitive material, causing the photosensitive material to generate a solubility-changing agent. The method can also include removing the solubility-changing agent. The actinic radiation of varied intensities can correspond to depths of grooves between the grating elements.

公开(公告)号：US20240128212A1

公开(公告)日：2024-04-18

申请号：US18313177

申请日：2023-05-05

Applicant: Tokyo Electron Limited

Inventor： Joshua HOOGE ,  Michael CARCASI

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/80 ,  H01L2224/03452 ,  H01L2224/05578 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A semiconductor structure includes a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. The semiconductor structure includes a conductive feature embedded in the dielectric layer. The semiconductor structure includes a barrier layer disposed between the conductive feature and the dielectric layer. The semiconductor structure further includes a self-assembled monolayer (SAM) disposed over the barrier layer, at least a portion of the SAM directly contacting the conductive feature.

公开(公告)号：US20160291474A1

公开(公告)日：2016-10-06

申请号：US14801703

申请日：2015-07-16

Applicant: Tokyo Electron Limited

Inventor： Mark L. SCHATTENBURG ,  Rudolf H. HENDEL ,  Michael CARCASI

IPC: G03F7/20

CPC classification number: G03F7/2004 ,  C07K14/47 ,  G03F7/201 ,  G03F7/2022

Abstract: A substrate may be disposed on a substrate support in a flood exposure treatment system. A flood exposure dose profile may be selected. The substrate may be exposed to flood irradiation from a source, and the flood irradiation may be terminated when the selected flood exposure dose profile is achieved. Exposing the substrate to flood irradiation may comprise controlling at least one of a substrate rotation rate, a source scanning rate, a substrate scanning rate, a source power setting, a distance from the source to the substrate, a source aperture setting, an angle of incidence of flood irradiation on the substrate, and a source focus position to achieve the selected flood exposure dose profile.

Abstract translation: 衬底可以设置在淹没暴露处理系统中的衬底支撑件上。 可以选择洪水曝光剂量分布。 衬底可以暴露于来自源的泛光照射，并且当实现所选择的曝光剂量曲线时，可以终止泛光照射。 将衬底暴露于泛光照射可以包括以下步骤中的至少一个：控制衬底旋转速率，源扫描速率，衬底扫描速率，源功率设置，从源到衬底的距离，源孔径设置， 在基板上发生泛光照射，以及源焦点位置以实现所选择的曝光剂量分布。