公开(公告)号：US20250149315A1

公开(公告)日：2025-05-08

申请号：US19001626

申请日：2024-12-26

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Toshihisa OZU ,  Satoru NAKAMURA ,  Yusuke SHIMIZU

IPC: H01J37/32

Abstract: An adjustment method includes: acquiring reference distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a first chamber and a substrate placed at a first substrate support disposed in the first chamber in a first plasma processing apparatus including the first chamber and the first substrate support; acquiring distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a second chamber and a substrate placed at a second substrate support disposed in the second chamber in a second plasma processing apparatus including the second chamber and the second substrate support; and adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

公开(公告)号：US20240297054A1

公开(公告)日：2024-09-05

申请号：US18660822

申请日：2024-05-10

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Shinya TAMONOKI ,  Koichi NAGAMI ,  Shinya ISHIKAWA ,  Naoki FUJIWARA ,  Naoki MIHARA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/67706 ,  H01L21/68764

Abstract: There is a substrate processing apparatus for processing a substrate, comprising: a power receiver including a power reception coil to which power is transmitted in a non-contact manner from a power transmission coil located outside the substrate processing apparatus, wherein the substrate processing apparatus is configured to supply power to at least one unit or member that uses power from the power receiver.

公开(公告)号：US20240030012A1

公开(公告)日：2024-01-25

申请号：US18225045

申请日：2023-07-21

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Toshihisa OZU ,  Satoru NAKAMURA ,  Yusuke SHIMIZU

IPC: H01J37/32 ,  G01M3/00 ,  G01N25/72

CPC classification number: H01J37/32935 ,  G01M3/002 ,  G01N25/72

Abstract: The present disclosure provides a detection method implemented in a plasma processing apparatus. The plasma processing apparatus comprising a plasma processing chamber, a substrate support disposed in the plasma processing chamber and a plurality of heaters disposed in the substrate support, the detection method comprising: disposing a substrate on the substrate support; performing plasma processing by generating plasma in the plasma processing chamber; measuring temperatures of each of the plurality of heaters with a plasma being formed in the plasma processing chamber; and detecting a significant point in the substrate support based on the measured temperatures of the plurality of heaters.

公开(公告)号：US20210027980A1

公开(公告)日：2021-01-28

申请号：US17067912

申请日：2020-10-12

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

IPC: H01J37/21 ,  H01J37/32

Abstract: A plasma etching apparatus includes a chamber, a susceptor in the chamber, an electrostatic chuck provided on the susceptor, and a high frequency power supply for supplying a high frequency power for generating a plasma in the chamber. The plasma etching apparatus also includes a gas inlet port provided in the chamber and configured to supply an etching gas, and a ring disposed in an outer periphery of a substrate supported by the electrostatic chuck that is positioned over the susceptor. An inner diameter of the ring is larger than an outer diameter of the substrate. The ring is separately positioned at a separation distance over the susceptor. The substrate is etched by using the plasma generated by the high frequency power that is supplied by the high frequency power supply. The separation distance between the ring and the susceptor is adjustable when the substrate is etched.

公开(公告)号：US20200111645A1

公开(公告)日：2020-04-09

申请号：US16708856

申请日：2019-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

公开(公告)号：US20200075292A1

公开(公告)日：2020-03-05

申请号：US16552372

申请日：2019-08-27

Applicant: Tokyo Electron Limited

Inventor： Ayako ITO ,  Koji KOYAMA ,  Yuki KAWADA ,  Takahiro SENDA ,  Naoki MATSUMOTO

IPC: H01J37/32 ,  H01P1/08 ,  H05H1/24

Abstract: In one exemplary embodiment, a second waveguide is connected to an upper wall of a first waveguide and communicates with the first waveguide, a dielectric window is in contact with a lower wall of the first waveguide, a first inner conductor penetrates an upper wall, is electrically connected with the upper wall, and extends along the direction of a tube axis from an inside of the first waveguide to an inside of a third waveguide, the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide, a first opening end of the third waveguide is connected to the dielectric window, and a drive device is connected to the first inner conductor, and is configured to drive the first inner conductor in the direction of the tube axis.

公开(公告)号：US20190279845A1

公开(公告)日：2019-09-12

申请号：US16298307

申请日：2019-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki MATSUMOTO ,  Yuki KAWADA ,  Ayako ITO ,  Koji KOYAMA ,  Takahiro SENDA ,  Takashi SUZUKI ,  Yoshikazu AZUMAYA

IPC: H01J37/32

Abstract: An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic wave in the first waveguide, a coaxial conversion part causes propagation of the electromagnetic waves dispersed by the dispersion part to direct to a side of the dielectric window, and a front surface of the dielectric window does not have irregularities.

公开(公告)号：US20150294839A1

公开(公告)日：2015-10-15

申请号：US14681161

申请日：2015-04-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKABA ,  Tetsuya NISHIZUKA ,  Naoki MATSUMOTO ,  Michitaka AITA ,  Takashi MINAKAWA ,  Kazuki TAKAHASHI ,  Jun YOSHIKAWA ,  Motoshi FUKUDOME ,  Naoki MIHARA ,  Hiroyuki KONDO

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/3222

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.

Abstract translation: 公开了一种等离子体处理装置，其包括处理容器，放置台，中央引入部和周边引入部。 中心介绍部分在放置台上方提供。 中心介绍沿着穿过放置台的中心的轴线向放置台引入气体。 周边引入部设置在中心引导部和放置台的上表面之间的高度方向。 另外，周边导入部沿着侧壁形成。 周边引入部分提供沿相对于轴线沿圆周方向布置的多个气体喷射口。 当气体喷射口靠近轴线时，周边引入部分的多个气体喷射口远离放置台延伸。

公开(公告)号：US20140231016A1

公开(公告)日：2014-08-21

申请号：US14159546

申请日：2014-01-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Toshihisa NOZAWA ,  Naoki MATSUMOTO ,  Peter L. G. VENTZEK

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

Abstract: Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region.

Abstract translation: 公开了一种包括限定处理空间的处理容器，安装台和微波引入天线的等离子体处理装置。 安装台包括安装在容纳在处理容器中的工件的安装区域。 微波引入天线包括安装在安装台上方的电介质窗口。 电介质窗口包括邻接处理空间的底面区域。 底表面区域被构造成环形，以限制表面波传播到安装区域的边缘上方的区域。

公开(公告)号：US20240222075A1

公开(公告)日：2024-07-04

申请号：US18605275

申请日：2024-03-14

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Ken KOBAYASHI ,  Shinya TAMONOKI

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32091 ,  H01J37/32146 ,  H01J2237/327 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a first power source configured to supply a first electric signal to an antenna, the first electric signal including a first RF signal having a first RF frequency; a second power source configured to supply a second electric signal to at least one electrode, the second electric signal including a second RF signal having a second RF frequency; a third power source configured to supply a third electric signal to the at least one electrode, the third electric signal including a third RF signal or a DC signal having a third RF frequency that is lower than the first RF frequency and the second RF frequency; and a controller configured to control the first power source, the second power source, and the third power source so as to selectively execute a first, a second, and a third plasma processing mode.