公开(公告)号：US20250149316A1

公开(公告)日：2025-05-08

申请号：US19004463

申请日：2024-12-30

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Toshihisa OZU ,  Satoru NAKAMURA ,  Yusuke SHIMIZU

IPC: H01J37/32

Abstract: A technology for reducing variation in an ion flux distribution will be provided. There is provided a plasma processing method for performing plasma processing in a plasma processing apparatus including a chamber and a substrate support disposed in the chamber, the plasma processing performed on a substrate placed at the substrate support by generating plasma in the chamber. The plasma processing method includes: (a) the step of storing, in memory, first distribution data that is data relating to a distribution of an ion flux that occurs between the plasma generated in the chamber and a first substrate placed at the substrate support; (b-a) the step of placing a second substrate at the substrate support; and (b-b) a plasma processing step of generating the plasma in the chamber based on the first distribution data to perform the plasma processing on the second substrate.

公开(公告)号：US20240030014A1

公开(公告)日：2024-01-25

申请号：US18225077

申请日：2023-07-21

Applicant: Tokyo Electron Limited

Inventor： Yusuke SHIMIZU ,  Satoru NAKAMURA ,  Toshihisa OZU ,  Naoki MATSUMOTO

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32724 ,  H01J2237/2007 ,  H01J2237/24585

Abstract: A seasoning method implemented in a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber and an electrostatic chuck, the electrostatic chuck including a central region which supports a substrate and an annular region which surrounds the central region and supports a ring assembly, the seasoning method includes: disposing the ring assembly on the annular region of the electrostatic chuck; disposing the substrate on the central region of the electrostatic chuck; forming a plasma in the chamber; calculating a thermal resistance between the electrostatic chuck and the ring assembly; and determining, based on the calculated thermal resistance, whether to repeat the forming the plasma and the calculating the thermal resistance.

公开(公告)号：US20250149315A1

公开(公告)日：2025-05-08

申请号：US19001626

申请日：2024-12-26

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Toshihisa OZU ,  Satoru NAKAMURA ,  Yusuke SHIMIZU

IPC: H01J37/32

Abstract: An adjustment method includes: acquiring reference distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a first chamber and a substrate placed at a first substrate support disposed in the first chamber in a first plasma processing apparatus including the first chamber and the first substrate support; acquiring distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a second chamber and a substrate placed at a second substrate support disposed in the second chamber in a second plasma processing apparatus including the second chamber and the second substrate support; and adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

公开(公告)号：US20240030012A1

公开(公告)日：2024-01-25

申请号：US18225045

申请日：2023-07-21

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Toshihisa OZU ,  Satoru NAKAMURA ,  Yusuke SHIMIZU

IPC: H01J37/32 ,  G01M3/00 ,  G01N25/72

CPC classification number: H01J37/32935 ,  G01M3/002 ,  G01N25/72

Abstract: The present disclosure provides a detection method implemented in a plasma processing apparatus. The plasma processing apparatus comprising a plasma processing chamber, a substrate support disposed in the plasma processing chamber and a plurality of heaters disposed in the substrate support, the detection method comprising: disposing a substrate on the substrate support; performing plasma processing by generating plasma in the plasma processing chamber; measuring temperatures of each of the plurality of heaters with a plasma being formed in the plasma processing chamber; and detecting a significant point in the substrate support based on the measured temperatures of the plurality of heaters.

公开(公告)号：US20250166980A1

公开(公告)日：2025-05-22

申请号：US19033080

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Yusuke SHIMIZU ,  Satoru NAKAMURA ,  Toshihisa OZU ,  Naoki MATSUMOTO

IPC: H01J37/32

Abstract: Provided is a technique for grasping the state of plasma processing. A plasma processing method is a method for generating plasma in a chamber to executing plasma processing on a substrate in a plasma processing apparatus having the chamber and a substrate support disposed in the chamber, the method including (a) placing the substrate on the substrate support, (b) generating plasma in the chamber to execute the plasma processing on the substrate on the substrate support, (c) acquiring data related to ion flux generated between the plasma generated in the chamber and the substrate placed on the substrate support in the (b), and (d) detecting an end point of the plasma processing based on the data.

公开(公告)号：US20140262025A1

公开(公告)日：2014-09-18

申请号：US14287537

申请日：2014-05-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa OZU ,  Naoki MATSUMOTO ,  Takashi TSUKAMOTO ,  Kazuto TAKAI

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32137

Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Abstract translation: 改善基板表面上的等离子体工艺的均匀性。 在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中，导入到处理容器内的基板的中心部分的加工气体的导入量与导入量 在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。 因此，可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。 因此，提高了衬底表面上的等离子体处理的均匀性。