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公开(公告)号：US20250118532A1
公开(公告)日：2025-04-10
申请号：US18434253
申请日：2024-02-06
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Nicholas Smieszek , Qi Wang , Akiteru Ko , Carl Smith
IPC: H01J37/32 , H01L21/3065
Abstract: A method for plasma processing includes biasing a substrate by ramping a sheath voltage during a first phase of a plasma process and removing sidewall charge buildup on a feature of the substrate in an absence of substrate biasing during a second phase of the plasma process.
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