公开(公告)号：US20240266149A1

公开(公告)日：2024-08-08

申请号：US18163934

申请日：2023-02-03

Applicant: Tokyo Electron Limited

Inventor： Qi Wang ,  Hamed Hajibabaeinajafabadi ,  Sergey Voronin ,  Akiteru Ko

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32477 ,  H01J37/32862 ,  H01L21/3065 ,  H01L21/3081 ,  H01J2237/3341 ,  H01L21/67253

Abstract: A method for performing an etch process includes forming a first protective layer over chamber walls of a semiconductor process chamber and performing a first etch process on an exposed major surface of a first substrate loaded into the semiconductor process chamber. The exposed major surface includes a first metal oxide resist layer. After performing the first etch process on the first substrate, the first protective layer is removed from the chamber walls with a cleaning process.

公开(公告)号：US20240133742A1

公开(公告)日：2024-04-25

申请号：US17973083

申请日：2022-10-24

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Andrej Mitrovic ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/443 ,  G01J3/02

CPC classification number: G01J3/443 ,  G01J3/0205

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

公开(公告)号：US20220384607A1

公开(公告)日：2022-12-01

申请号：US17336043

申请日：2021-06-01

Applicant: Tokyo Electron Limited

Inventor： Yusuke Yoshida ,  Sergey Voronin ,  Christopher Talone ,  Alok Ranjan

IPC: H01L29/66

Abstract: In an example, a method includes depositing a first sidewall spacer layer over a substrate having a layer stack including alternating layers of a nanosheet and a sacrificial layer, and a dummy gate formed over the layer stack, the first sidewall spacer layer formed over the dummy gate. The method includes depositing a metal-containing liner over the first sidewall spacer layer; forming a first sidewall spacer along the dummy gate by anisotropically etching the metal-containing liner and the first sidewall spacer layer; performing an anisotropic etch back process to form a plurality of vertical recesses in the layer stack; laterally etching the layer stack and form a plurality of lateral recesses between adjacent nanosheets; depositing a second sidewall spacer layer to fill the plurality of lateral recesses; and etching a portion of the second sidewall spacer layer to expose tips of the nanosheet layers.

公开(公告)号：US20220059765A1

公开(公告)日：2022-02-24

申请号：US16999441

申请日：2020-08-21

Applicant: Tokyo Electron Limited ,  SUNY Polytechnic Institute, College of Nanoscience and Engineering

Inventor： Sergey Voronin ,  Qi Wang ,  Shyam Sridhar ,  Karsten Beckmann ,  Martin Rodgers ,  Nathaniel Cady

IPC: H01L45/00

Abstract: The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NH3 gases. The dry chemical gas removal process utilizing HF and NH3 gases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.

公开(公告)号：US10998170B2

公开(公告)日：2021-05-04

申请号：US16377522

申请日：2019-04-08

Applicant: Tokyo Electron Limited ,  MKS Instruments, Inc.

Inventor： Yusuke Yoshida ,  Sergey Voronin ,  Alok Ranjan ,  David J. Coumou ,  Scott E. White

IPC: H01J37/32

Abstract: Plasma ion energy distribution for ions having different masses is controlled by controlling the relationship between a base RF frequency and a harmonic RF frequency. By the controlling the RF power frequencies, characteristics of the plasma process may be changed based on ion mass. The ions that dominate etching may be selectively based upon whether an ion is lighter or heavier than other ions. Similarly, atomic layer etch processes may be controlled such that the process may be switched between a layer modification step and a layer etch step though adjustment of the RF frequencies. Such switching is capable of being performed within the same gas phase of the plasma process. The control of the RF power includes controlling the phase difference and/or amplitude ratios between a base RF frequency and a harmonic frequency based upon the detection of one or more electrical characteristics within the plasma apparatus.

公开(公告)号：US10818482B2

公开(公告)日：2020-10-27

申请号：US16576327

申请日：2019-09-19

Applicant: Tokyo Electron Limited

Inventor： Yusuke Yoshida ,  Jason Marion ,  Sergey Voronin ,  Alok Ranjan

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

公开(公告)号：US20190304750A1

公开(公告)日：2019-10-03

申请号：US15939835

申请日：2018-03-29

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Christopher Talone ,  Alok Ranjan

IPC: H01J37/32

Abstract: Methods and systems for treating a substrate are described. In an embodiment, a method may include receiving a microelectronic substrate in a plasma processing chamber. A method may also include receiving process gas in the plasma processing chamber. Additionally, a method may include applying energy to the process gas with a first energy source and applying energy to the process gas with a second energy source. The method may further include selectively adjusting at least one of the first energy source and the second energy source between a first state and a second state.

公开(公告)号：US12158374B2

公开(公告)日：2024-12-03

申请号：US17973083

申请日：2022-10-25

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Andrej Mitrovic ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/44 ,  G01J3/02 ,  G01J3/443

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

公开(公告)号：US20240230409A9

公开(公告)日：2024-07-11

申请号：US17973083

申请日：2022-10-25

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Andrej Mitrovic ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/443 ,  G01J3/02

CPC classification number: G01J3/443 ,  G01J3/0205

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

公开(公告)号：US20240094056A1

公开(公告)日：2024-03-21

申请号：US17948407

申请日：2022-09-20

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/443 ,  H01J37/32

CPC classification number: G01J3/443 ,  H01J37/32146 ,  H01J37/32972 ,  H01J2237/24485 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/334

Abstract: A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.