公开(公告)号：US20240282597A1

公开(公告)日：2024-08-22

申请号：US18112120

申请日：2023-02-21

Applicant: Tokyo Electron Limited

Inventor： Shan Hu ,  Peter D'Elia

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/68764

Abstract: Improved puddle processes and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate. More specifically, improved methods are provided herein for retaining a puddle within a center region of a semiconductor substrate while the substrate is stationary, or rotating at relatively low rotational speeds. In the disclosed embodiments, a puddle is retained within a center region of the semiconductor substrate by a thin film, which is deposited within a peripheral edge region of the substrate before a processing liquid is dispensed within the center region of the substrate to form the puddle.

公开(公告)号：US20230405642A1

公开(公告)日：2023-12-21

申请号：US18192279

申请日：2023-03-29

Applicant: Tokyo Electron Limited

Inventor： Shan Hu ,  Peter D'Elia ,  Ronald Nasman

IPC: B08B3/02 ,  H01L21/67 ,  H01L21/02 ,  B08B13/00 ,  F26B5/00

CPC classification number: B08B3/02 ,  H01L21/67028 ,  B08B2203/007 ,  B08B13/00 ,  F26B5/005 ,  H01L21/02057

Abstract: Improved processing systems and methods are provided for wet and dry processing of a semiconductor wafer. Provided is an enclosed chamber for processing a semiconductor wafer within a processing space and a drainage system for directing processing fluids out of the processing space. The enclosed chamber includes a top plate and a bottom plate, which physically confine the processing fluids within a relatively small, enclosed processing space. This forces the processing fluids to flow radially across the wafer surface(s) without the need to rotate the wafer. The drainage system contains a conduit that is downstream from the processing space and configured to retain a portion of a processing fluid dispensed within the processing space. The portion retained within the conduit provides a pressure resistance against the processing fluid(s) dispensed within the processing space to improve wet and dry processing of the wafer surfaces.

公开(公告)号：US12288698B2

公开(公告)日：2025-04-29

申请号：US18112120

申请日：2023-02-21

Applicant: Tokyo Electron Limited

Inventor： Shan Hu ,  Peter D'Elia

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

Abstract: Improved puddle processes and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate. More specifically, improved methods are provided herein for retaining a puddle within a center region of a semiconductor substrate while the substrate is stationary, or rotating at relatively low rotational speeds. In the disclosed embodiments, a puddle is retained within a center region of the semiconductor substrate by a thin film, which is deposited within a peripheral edge region of the substrate before a processing liquid is dispensed within the center region of the substrate to form the puddle.

公开(公告)号：US20240399422A1

公开(公告)日：2024-12-05

申请号：US18806852

申请日：2024-08-16

Applicant: Tokyo Electron Limited

Inventor： Shan Hu ,  Peter D'Elia ,  Ronald Nasman

IPC: B08B3/02 ,  B08B13/00 ,  F26B5/00 ,  H01L21/02 ,  H01L21/67

Abstract: Improved processing systems and methods are provided for wet and dry processing of a semiconductor wafer. Provided is an enclosed chamber for processing a semiconductor wafer within a processing space and a drainage system for directing processing fluids out of the processing space. The enclosed chamber includes a top plate and a bottom plate, which physically confine the processing fluids within a relatively small, enclosed processing space. This forces the processing fluids to flow radially across the wafer surface(s) without the need to rotate the wafer. The drainage system contains a conduit that is downstream from the processing space and configured to retain a portion of a processing fluid dispensed within the processing space. The portion retained within the conduit provides a pressure resistance against the processing fluid(s) dispensed within the processing space to improve wet and dry processing of the wafer surfaces.

公开(公告)号：US12103052B2

公开(公告)日：2024-10-01

申请号：US18192279

申请日：2023-03-29

Applicant: Tokyo Electron Limited

Inventor： Shan Hu ,  Peter D'Elia ,  Ronald Nasman

IPC: B08B3/02 ,  B08B13/00 ,  F26B5/00 ,  H01L21/02 ,  H01L21/67

CPC classification number: B08B3/02 ,  B08B13/00 ,  F26B5/005 ,  H01L21/02057 ,  H01L21/67028 ,  B08B2203/007

Abstract: Improved processing systems and methods are provided for wet and dry processing of a semiconductor wafer. Provided is an enclosed chamber for processing a semiconductor wafer within a processing space and a drainage system for directing processing fluids out of the processing space. The enclosed chamber includes a top plate and a bottom plate, which physically confine the processing fluids within a relatively small, enclosed processing space. This forces the processing fluids to flow radially across the wafer surface(s) without the need to rotate the wafer. The drainage system contains a conduit that is downstream from the processing space and configured to retain a portion of a processing fluid dispensed within the processing space. The portion retained within the conduit provides a pressure resistance against the processing fluid(s) dispensed within the processing space to improve wet and dry processing of the wafer surfaces.