公开(公告)号：US20240243006A1

公开(公告)日：2024-07-18

申请号：US18388564

申请日：2023-11-10

Applicant: Tokyo Electron Limited

Inventor： Scott Lefevre ,  Arkalgud Sitaram ,  Kevin Ryan ,  Ilseok Son ,  Panupong Jaipan

IPC: H01L21/762 ,  H01L21/321

CPC classification number: H01L21/76251 ,  H01L21/3212 ,  H01L21/76243

Abstract: In some implementations, a method may include providing a silicon on insulator (SOI) substrate having a first semiconductor layer, a buried oxide layer over the first semiconductor region, and a second semiconductor region over the buried oxide, the second semiconductor region having a plurality of recesses exposing the underlying buried oxide, each recess having a shape and size configured to accommodate a die. In addition, the device may include bonding a plurality of semiconductor dies to the buried oxide through the plurality of recesses.

公开(公告)号：US20240194478A1

公开(公告)日：2024-06-13

申请号：US18078302

申请日：2022-12-09

Applicant: Tokyo Electron Limited

Inventor： Satohiko Hoshino ,  Scott Lefevre ,  Yuji Mimura

IPC: H01L21/02 ,  H01L21/18 ,  H01L21/67

CPC classification number: H01L21/02252 ,  H01L21/187 ,  H01L21/67017

Abstract: A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.

公开(公告)号：US20230369064A1

公开(公告)日：2023-11-16

申请号：US17742445

申请日：2022-05-12

Applicant: Tokyo Electron Limited

Inventor： Scott Lefevre ,  Angelique Raley

IPC: H01L21/3213 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32449 ,  H01L21/0234 ,  H01J2237/332

Abstract: A method of processing a substrate that includes: exposing a substrate to a first plasma including carbon, the substrate including a first layer including a dielectric material and a second layer including a metal, the first plasma forming a first carbonaceous deposit over the first layer and a second carbonaceous deposit over the second layer; exposing the first carbonaceous deposit and the second carbonaceous deposit to a second plasma including halogen, the second plasma selectively etching the second carbonaceous deposit relative to the first carbonaceous deposit to expose a surface of the second layer; and exposing the first carbonaceous deposit and the exposed surface of the second layer to the second plasma to selectively etch the second layer relative to the first carbonaceous deposit, the first carbonaceous deposit protecting the first layer from being etched by the second plasma.

公开(公告)号：US11626271B2

公开(公告)日：2023-04-11

申请号：US17325913

申请日：2021-05-20

Applicant: Tokyo Electron Limited

Inventor： Scott Lefevre ,  Akiteru Ko

IPC: H01J37/32 ,  H01L21/683 ,  B08B7/00

Abstract: Embodiments are disclosed for reducing substrate breaks which result from inadequate de-chucking. Contaminants are removed from the surface of a chuck by exposing the chuck to a plasma process that comprises a hydrogen (H)-containing plasma. The chuck is subjected to the hydrogen-based plasma when no substrate is on the chuck. In one embodiment, the plasma is a hydrocarbon-based plasma. Hydrogen in the hydrocarbon plasma may react with and remove the contaminants. The process may further include an additional plasma step for removal of any newly formed materials that may result from the hydrocarbon plasma. The removal step may be, for example, a subsequent plasma ash step. In one embodiment, the chuck is an electrostatic chuck and the contaminants comprise fluorine. By removing contaminants from the chuck surface, improved substrate de-chucking occurs. This improvement correspondingly leads to less substrate breakage when removing substrates from the chuck.

公开(公告)号：US20210398784A1

公开(公告)日：2021-12-23

申请号：US17325913

申请日：2021-05-20

Applicant: Tokyo Electron Limited

Inventor： Scott Lefevre ,  Akiteru Ko

IPC: H01J37/32 ,  H01L21/683 ,  B08B7/00

Abstract: Embodiments are disclosed for reducing substrate breaks which result from inadequate de-chucking. Contaminants are removed from the surface of a chuck by exposing the chuck to a plasma process that comprises a hydrogen (H)-containing plasma. The chuck is subjected to the hydrogen-based plasma when no substrate is on the chuck. In one embodiment, the plasma is a hydrocarbon-based plasma. Hydrogen in the hydrocarbon plasma may react with and remove the contaminants. The process may further include an additional plasma step for removal of any newly formed materials that may result from the hydrocarbon plasma. The removal step may be, for example, a subsequent plasma ash step. In one embodiment, the chuck is an electrostatic chuck and the contaminants comprise fluorine. By removing contaminants from the chuck surface, improved substrate de-chucking occurs. This improvement correspondingly leads to less substrate breakage when removing substrates from the chuck.