公开(公告)号：US11828794B2

公开(公告)日：2023-11-28

申请号：US17508232

申请日：2021-10-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Kasai ,  Tomohiro Ota

IPC: G01R31/28 ,  G01K13/00 ,  G01K7/01 ,  G01K7/18

CPC classification number: G01R31/2875 ,  G01K7/01 ,  G01K7/18 ,  G01K13/00

Abstract: There is provided a placement table having an upper surface on which a device to be processed is placed. The placement table comprises: a top plate having a placement surface for the device; a heating unit configured to heat the top plate; a plurality of temperature sensors configured to acquire temperature of the top plate at desired measurement positions in a plan view; and a positioning unit electrically connected to the temperature sensors and configured to position the temperature sensors at the measurement positions in a plan view. The positioning unit is formed of a flexible substrate having flexibility.

公开(公告)号：US11525856B2

公开(公告)日：2022-12-13

申请号：US17287836

申请日：2019-10-17

Applicant: Tokyo Electron Limited

Inventor： Naoki Akiyama ,  Susumu Saito ,  Hiroyuki Nakayama ,  Shigeru Kasai

IPC: G01R31/28 ,  G01R31/308 ,  H01L27/146

Abstract: An inspection apparatus for inspecting a backside irradiation type imaging device formed on an inspection object includes: a stage on which the inspection object is mounted such that the stage faces a rear surface of the backside irradiation type imaging device, wherein the stage includes: a transmitter including a flat plate formed of a light transmitting material, and configured to mount the inspection object on the transmitter; and a light emitter disposed at a location facing the inspection object with the transmitter interposed between the light emitter and the inspection object, and configured to emit light toward the transmitter, and wherein the transmitter transmits the light from the light emitter while diffusing the light.

公开(公告)号：US11340283B2

公开(公告)日：2022-05-24

申请号：US16976672

申请日：2019-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Kasai ,  Masahito Kobayashi

IPC: G01R31/26 ,  H01L21/26

Abstract: A testing device for inspecting an electronic device by causing contact terminals to electrically contact the electronic device, includes: a mounting table formed with a light transmission member opposite the side on which a inspection object is placed and having therein a coolant flow path through which a coolant capable of transmitting light flows; a light irradiation mechanism disposed so as to face the surface opposite the inspection object placement side of the mounting table, and having LEDs pointing toward the inspection object; and a controller controlling absorption of heat by the coolant and heating by the lights from the LEDs to control the temperature of the electronic device to be inspected. The controller controls the light output from the LEDs based on the measured temperature of the electronic device to be inspected and controls the absorption of heat by the coolant based on the LED light output.

公开(公告)号：US09204500B2

公开(公告)日：2015-12-01

申请号：US13727000

申请日：2012-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Shigeru Kasai ,  Jun Yamashita ,  Masakazu Ban

IPC: H05B6/64 ,  H05B6/72 ,  H05B6/74 ,  H05B6/80 ,  H05B6/70

CPC classification number: H05B6/6402 ,  H05B6/6426 ,  H05B6/70 ,  H05B6/707 ,  H05B6/72 ,  H05B6/806

Abstract: In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof.

Abstract translation: 在微波加热装置中，四个微波导入口被配置在处理室的顶部以大约90°的角度彼此间隔开的位置，使得其长边和短边平行 到四个侧壁的内表面。 微波引入端口以这样的方式设置，即当相应的微波引入端口移动时，每个微波引入端口不与其长边与相应的微波导入口的长边平行的另一个微波导入口重叠 在垂直于其长边的方向上平移。

公开(公告)号：US20140283747A1

公开(公告)日：2014-09-25

申请号：US14219360

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Shigeru Kasai ,  Taro Ikeda ,  Yutaka Fujino

IPC: C23C16/44 ,  B05B1/00

CPC classification number: C23C16/4401 ,  B05B1/005 ,  B05B1/14 ,  C23C16/452 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/3244

Abstract: A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.

Abstract translation: 一种等离子体处理装置，包括其中执行等离子体处理的处理容器10和具有向处理容器10供应第一气体和第二气体的喷淋板100的等离子体生成天线20，在基板上进行等离子体处理 由通过微波供给在淋浴板100的表面上形成的表面波产生的等离子体。 淋浴板100具有多个气孔133，其被配置为将第一气体供应到处理容器10中，并且多个供给喷嘴160构造成将第二气体供应到处理容器10中，并且供给喷嘴160从底表面垂直向下突出 并且设置在与气孔133不同的位置。

公开(公告)号：US09640388B2

公开(公告)日：2017-05-02

申请号：US15043242

申请日：2016-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Kasai ,  Kotaro Miyatani ,  Takuya Kurotori ,  Kenichi Kote ,  Yutaka Fujino ,  Akira Tanihara ,  Kohei Kawamura

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/02345 ,  H01L21/0212 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02315

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

公开(公告)号：US09552966B2

公开(公告)日：2017-01-24

申请号：US14364434

申请日：2012-12-05

Applicant: Tokyo Electron Limited

Inventor： Tomohito Komatsu ,  Taro Ikeda ,  Shigeru Kasai

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/006 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber.

Abstract translation: 用于等离子体生成的天线将通过同轴波导传输的微波辐射到处理室中，并将微波传播到处理室的金属表面上，以将气体转换成表面波等离子体。 天线包括用于使气体通过天线的气体流动通道，与气体流动路径连通并将气体引入处理室的多个气体孔，以及与气体流动路径分离的多个槽， 穿透气体流路。 这些槽将通过同轴波导传送的微波和慢波板通过处理室。 穿过气体流动路径的相邻槽的部分之间的第一空间布置成比通过处理室的等离子体产生空间的相邻槽的部分之间的第二空间宽。

公开(公告)号：US11668665B2

公开(公告)日：2023-06-06

申请号：US16698379

申请日：2019-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Kasai

IPC: G01N25/18 ,  H01L23/34 ,  H01L23/36 ,  H01L23/00

CPC classification number: G01N25/18 ,  H01L23/345 ,  H01L23/36 ,  H01L24/80 ,  H01L2224/80009 ,  H01L2224/80895

Abstract: A test wafer according to an embodiment of the present disclosure is a test wafer used for simulation of heat emission of devices on a wafer, and includes a silicon wafer and a silicon heater bonded to a surface of the silicon wafer.

公开(公告)号：US11425791B2

公开(公告)日：2022-08-23

申请号：US16713708

申请日：2019-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Kasai

IPC: H05B1/02 ,  B32B7/027 ,  B32B7/12 ,  B32B37/14 ,  H01L21/687 ,  H01L21/683

Abstract: There is provided a mounting table on which a workpiece is mounted, including: a plurality of layers including a ceiling layer having a front surface on which the workpiece is mounted, and a heating layer formed at a rear surface side of the ceiling layer and configured to heat the ceiling layer, the plurality of layers being stacked above one another. Each of the plurality of layers is formed by a silicon single crystal substrate or a silicon polycrystalline substrate. Each of the plurality of layers is bonded to a different layer which is adjacent in a stacking direction through oxide films formed on the silicon single crystal substrate or the silicon polycrystalline substrate.

公开(公告)号：US09663856B2

公开(公告)日：2017-05-30

申请号：US14219360

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Shigeru Kasai ,  Taro Ikeda ,  Yutaka Fujino

IPC: C23C16/44 ,  B05B1/00 ,  C23C16/452 ,  H01J37/32 ,  B05B1/14

CPC classification number: C23C16/4401 ,  B05B1/005 ,  B05B1/14 ,  C23C16/452 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/3244

Abstract: A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.