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    Multilayer film etching method and plasma processing apparatus
    1.
    发明授权
    Multilayer film etching method and plasma processing apparatus 有权
    多层膜蚀刻法和等离子体处理装置

    公开(公告)号：US09373520B2

    公开(公告)日：2016-06-21

    申请号：US14603579

    申请日：2015-01-23

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shota Yoshimura ,  Eiji Suzuki ,  Tomiko Kamada ,  Hiroto Ohtake

    IPC: H01L21/302 ,  H01L21/311 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/67 ,  H01L27/115 ,  H01J37/32

    CPC classification number: H01L21/311 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32449 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L27/11524

    Abstract: In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.

    Abstract translation: 在本发明的一个实施例中，提供了一种蚀刻多层膜的方法，该多层膜通过层压具有第一介电常数的第一层和具有第二介电常数的第二层的多个交替层而形成。 该方法包括（a）多层膜蚀刻步骤，其中将蚀刻剂气体供应到处理室中，并且微波被供应到处理室中以激发蚀刻剂气体的等离子体; 和（b）抗蚀剂掩模还原步骤，其中将含氧气体和氟碳基气体供应到处理室，并且将微波供应到处理室中以激发含氧气体和碳氟化合物的等离子体 的气体。 在该方法中，交替重复步骤（a）和（b）。

    Semiconductor device manufacturing method
    3.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号：US09034698B2

    公开(公告)日：2015-05-19

    申请号：US14464978

    申请日：2014-08-21

    Applicant: Tokyo Electron Limited

    Inventor： Toshihisa Ozu ,  Shota Yoshimura ,  Hiroto Ohtake ,  Kosuke Kariu ,  Takashi Tsukamoto

    IPC: H01L21/332 ,  H01L29/49 ,  H01L29/66

    CPC classification number: H01L29/4941 ,  H01L21/32137 ,  H01L29/66795

    Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

    Abstract translation: 一种半导体器件制造方法，包括：在处理室内激发含有HBr气体和Cl 2气体的处理气体，所述处理室容纳包含基板的目标物体，所述基板由硅构成，所述区域从所述基板突出并配置成形成间隙， 形成为覆盖所述区域的金属层，形成在所述金属层上的多晶硅层，以及形成在所述多晶硅层上的有机掩模。 以相对于处理气体中的HBr气体的流量为约5％以上至约10％以下的流量供给Cl 2气体。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    4.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20150096882A1

    公开(公告)日：2015-04-09

    申请号：US14402371

    申请日：2013-06-14

    Applicant: Tokyo Electron Limited

    Inventor： Naoki Matsumoto ,  Koji Koyama ,  Toshihisa Ozu ,  Shota Yoshimura

    IPC: H01J37/32 ,  C23F4/00

    CPC classification number: H01J37/32449 ,  C23F4/00 ,  H01J37/321 ,  H01J37/3244 ,  H01L21/31116 ,  H01L21/32134

    Abstract: A plasma processing apparatus 1 includes a central inlet unit that introduces a processing gas containing at least one of an Ar gas, a He gas and an etching gas toward a central portion of a wafer W; a peripheral inlet unit 61 that introduces the processing gas toward a periphery portion thereof; a flow rate adjusting unit that adjusts a flow rate of the processing gas introduced toward the central portion thereof from the central inlet unit 55 and a flow rate of the processing gas introduced toward the periphery portion thereof from the peripheral inlet unit 61; and a controller 49 that controls the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the He gas to the Ar gas contained in the processing gas is equal to or higher than a preset value.

    Abstract translation: 等离子体处理装置1包括：中心入口单元，其向晶片W的中心部分引入含有Ar气体，He气体和蚀刻气体中的至少一种的处理气体; 外围入口单元61，其将处理气体朝向其周边部分引入; 流量调节单元，其从中央入口单元55调节从其中心部分引入的处理气体的流量和从周边入口单元61向其周边部分引入的处理气体的流量; 以及控制器49，其控制由流量调节单元调节的处理气体的流量，使得处理气体中包含的He气体与Ar气体的分压比等于或高于预设值。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    6.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件制造方法

    公开(公告)号：US20150056773A1

    公开(公告)日：2015-02-26

    申请号：US14464978

    申请日：2014-08-21

    Applicant: Tokyo Electron Limited

    Inventor： Toshihisa Ozu ,  Shota Yoshimura ,  Hiroto Ohtake ,  Kosuke Kariu ,  Takashi Tsukamoto

    IPC: H01L29/49 ,  H01L29/66

    CPC classification number: H01L29/4941 ,  H01L21/32137 ,  H01L29/66795

    Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

    Abstract translation: 一种半导体器件制造方法，包括：在处理室内激发含有HBr气体和Cl 2气体的处理气体，所述处理室容纳包含基板的目标物体，所述基板由硅构成，所述区域从所述基板突出并配置成形成间隙， 形成为覆盖所述区域的金属层，形成在所述金属层上的多晶硅层，以及形成在所述多晶硅层上的有机掩模。 以相对于处理气体中的HBr气体的流量为约5％以上至约10％以下的流量供给Cl 2气体。

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