公开(公告)号：US20180130675A1

公开(公告)日：2018-05-10

申请号：US15801803

申请日：2017-11-02

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiromi Kiyose ,  Takuro Masuzumi ,  Hiroki Ohno ,  Kento Tsukano ,  Hiroshi Marumoto ,  Shotaro Kitayama

IPC: H01L21/67 ,  H01L21/02 ,  B01J3/06 ,  B08B7/00 ,  B01J3/00

CPC classification number: H01L21/67034 ,  B01J3/008 ,  B01J3/06 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67051

Abstract: A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. In the circulation process, the processing fluid is supplied into the processing container from the second fluid supply unit.

公开(公告)号：US20180158699A1

公开(公告)日：2018-06-07

申请号：US15826074

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Shotaro Kitayama ,  Gentaro Goshi ,  Hiroki Ohno ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Hiromi Kiyose

IPC: H01L21/67 ,  B08B5/00 ,  B08B9/00 ,  B08B15/00 ,  F26B5/00

CPC classification number: H01L21/67034 ,  B08B3/08 ,  B08B5/00 ,  B08B9/00 ,  B08B15/007 ,  B08B2203/0229 ,  C11D7/261 ,  C11D11/0041 ,  F26B5/005

Abstract: Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.

公开(公告)号：US10395950B2

公开(公告)日：2019-08-27

申请号：US15801803

申请日：2017-11-02

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiromi Kiyose ,  Takuro Masuzumi ,  Hiroki Ohno ,  Kento Tsukano ,  Hiroshi Marumoto ,  Shotaro Kitayama

IPC: B01J3/00 ,  B01J3/06 ,  B08B7/00 ,  H01L21/02 ,  H01L21/67

Abstract: A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. In the circulation process, the processing fluid is supplied into the processing container from the second fluid supply unit.

公开(公告)号：US20180254200A1

公开(公告)日：2018-09-06

申请号：US15907522

申请日：2018-02-28

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Gentaro Goshi ,  Keisuke Egashira ,  Hiroki Ohno ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Shotaro Kitayama

IPC: H01L21/67 ,  F26B5/00 ,  H01L21/02

CPC classification number: H01L21/67034 ,  F26B5/00 ,  F26B5/005 ,  F26B21/14 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67051 ,  H01L21/67173

Abstract: A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.

公开(公告)号：US20180138035A1

公开(公告)日：2018-05-17

申请号：US15814592

申请日：2017-11-16

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Keisuke Egashira ,  Gentaro Goshi ,  Yosuke Kawabuchi ,  Shotaro Kitayama ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Hiromi Kiyose

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6719

Abstract: During at least part of a time period for a pressure increasing step of increasing a pressure inside a processing container from a pressure lower than a critical pressure of a processing fluid to a pressure higher than the critical pressure, pressure increasing is performed by supplying the processing fluid into the processing container from a fluid supply source while discharging the processing fluid from the processing container at a controlled discharge flow rate. Particles attached to the surfaces of members inside the processing container travel upward by the supply of the processing fluid into the processing container from the fluid supply source. The particles are discharged along with the processing fluid from the processing container.

公开(公告)号：US10950465B2

公开(公告)日：2021-03-16

申请号：US15826074

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Shotaro Kitayama ,  Gentaro Goshi ,  Hiroki Ohno ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Hiromi Kiyose

IPC: H01L21/67 ,  B08B3/08 ,  B08B5/00 ,  F26B5/00 ,  B08B9/00 ,  C11D11/00 ,  C11D7/26 ,  B08B15/00

Abstract: Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.

公开(公告)号：US10692739B2

公开(公告)日：2020-06-23

申请号：US15907522

申请日：2018-02-28

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Gentaro Goshi ,  Keisuke Egashira ,  Hiroki Ohno ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Shotaro Kitayama

IPC: F26B5/08 ,  H01L21/67 ,  F26B5/00 ,  H01L21/02 ,  F26B21/14

Abstract: A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.

公开(公告)号：US20180138058A1

公开(公告)日：2018-05-17

申请号：US15805291

申请日：2017-11-07

Applicant: Tokyo Electron Limited

Inventor： Keisuke Egashira ,  Yosuke Kawabuchi ,  Gentaro Goshi ,  Hiroki Ohno ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Shotaro Kitayama ,  Satoshi Okamura

IPC: H01L21/67 ,  B08B3/08

CPC classification number: H01L21/67034 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67248

Abstract: A substrate processing apparatus of the present disclosure includes: a processing container; and a supply line which connects the processing container with a fluid source that delivers a supercritical processing fluid. A first opening/closing valve is provided in the supply line. A first throttle is provided on a downstream side of the first opening/closing valve to change the supercritical processing fluid flowing through the supply line to a gaseous state when a pressure within the processing container is equal to or lower than a critical pressure of the processing fluid. A first filter is provided on a downstream side of the first throttle.