公开(公告)号：US20230230817A1

公开(公告)日：2023-07-20

申请号：US18153008

申请日：2023-01-11

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yu WAMURA ,  Yuichiro SASE ,  Yuji SAWADA ,  Hiroyuki KIKUCHI

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/503

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01J37/3211 ,  H01J37/32733 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/503 ,  H01J2237/20214 ,  H01J2237/3323 ,  H01J2237/024

Abstract: A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

公开(公告)号：US20220230852A1

公开(公告)日：2022-07-21

申请号：US17648436

申请日：2022-01-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Hiroyuki KIKUCHI ,  Shinji ASARI ,  Yuji SAWADA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

公开(公告)号：US20200312621A1

公开(公告)日：2020-10-01

申请号：US16826491

申请日：2020-03-23

Applicant: Tokyo Electron Limited

Inventor： Shigehiro MIURA ,  Masato YONEZAWA ,  Takehiro FUKADA ,  Yoshitaka ENOKI ,  Yuji SAWADA

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.