公开(公告)号：US20240387836A1

公开(公告)日：2024-11-21

申请号：US18576703

申请日：2022-03-15

Applicant: TOPSOE A/S

Inventor： Thomas Heiredal-Clausen ,  Jeppe Rass-Hansen ,  Bengt Peter Gustav Blennow ,  Martin Refslund Nielsen ,  Tobias Holt Nørby ,  Rainer Küngas ,  Cliver Klitholm

IPC: H01M8/0247 ,  H01M8/026 ,  H01M8/0271 ,  H01M8/12 ,  H01M8/1213 ,  H01M8/2425

Abstract: A Solid Oxide Cell stack has an integrated interconnect and spacer. which is formed by bending a surplus part of the plate interconnect 180° to form a spacer part on top of the interconnect and connected to the interconnect at least by the bend and also providing a fixture for a contact enabling layer which is located on at least one side of the integrated interconnect and spacer.

公开(公告)号：US20230093223A1

公开(公告)日：2023-03-23

申请号：US17798837

申请日：2021-02-15

Applicant: Topsoe A/S

Inventor： Thomas Heiredal-Clausen ,  Jeppe Rass-Hansen ,  Tobias Holt Nørby ,  Bengt Peter Gustav Blennow ,  Rainer Küngas ,  Martin Refslund Nielsen

IPC: H01M8/1246 ,  H01M8/2483 ,  H01M8/0286 ,  H01M8/026

Abstract: A Solid Oxide Cell stack has an integrated interconnect and spacer, which is formed by bending a surplus part of the plate interconnect 180° to form a spacer part on top of the interconnect and connected to the interconnect at least by the bend.

公开(公告)号：US20240218536A1

公开(公告)日：2024-07-04

申请号：US18289188

申请日：2022-02-08

Applicant: Topsoe A/S

Inventor： Thomas Heiredal-Clausen ,  Jeppe Rass-Hansen ,  Tobias Holt Nørby ,  Rainer Küngas ,  Bengt Peter Gustav Blennow

IPC: C25B9/65 ,  C25B9/19 ,  C25B9/77 ,  C25B13/07 ,  H01M8/0247 ,  H01M8/0258 ,  H01M8/0282 ,  H01M8/12 ,  H01M8/2484

CPC classification number: C25B9/66 ,  C25B9/19 ,  C25B9/77 ,  C25B13/07 ,  H01M8/0247 ,  H01M8/0258 ,  H01M8/0282 ,  H01M2008/1293 ,  H01M8/2484

Abstract: A Solid Oxide Cell stack has an integrated interconnect, spacer and manifold, which is formed by bending a surplus part of the plate interconnect 180° to form a spacer part on top of the interconnect and connected to the interconnect at least by the bend and comprising overlapping primary and secondary gas inlet openings in adjacent layers in fluid connection.

公开(公告)号：US20240175147A1

公开(公告)日：2024-05-30

申请号：US18283182

申请日：2022-02-14

Applicant: Topsoe A/S

Inventor： Thomas Heiredal-Clausen ,  Jeppe Rass-Hansen ,  Bengt Peter Gustav Blennow ,  Tobias Holt Nørby ,  Rainer Küngas

IPC: C25B9/70 ,  C25B1/04 ,  C25B9/015 ,  C25B9/65

CPC classification number: C25B9/70 ,  C25B1/04 ,  C25B9/65 ,  C25B9/015

Abstract: A Solid Oxide Electrolysis Cell stack has cell layers and interconnect layers with fuel inlet areas which are considerably larger than the fuel outlet areas.