公开(公告)号：US11081613B2

公开(公告)日：2021-08-03

申请号：US16535548

申请日：2019-08-08

Applicant: Tower Semiconductor Ltd.

Inventor： Yakov Roizin ,  Carmel Sahar ,  Victor Kairys ,  Ruth Shima-edelstein

IPC: H01L31/112 ,  G01J1/42 ,  H01L31/0304 ,  H01L31/024

Abstract: A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer. An AlGaN layer is formed over the upper surface of the high-resistance GaN layer. A source contact and a drain contact extend through the AlGaN layer and contact the upper surface of the high-resistance GaN layer (and are thereby electrically coupled to the 2DEG channel). A drain depletion region extends entirely from the upper surface of the high-resistance GaN layer to the low-resistance GaN layer under the drain contact. An electrical current between the source and drain contacts is a function of UV light received by the GaN stack. An electrode is connected to the low-resistance GaN layer to allow for electrical refresh of the UV sensor.

公开(公告)号：US20210043793A1

公开(公告)日：2021-02-11

申请号：US16535548

申请日：2019-08-08

Applicant: Tower Semiconductor Ltd.

Inventor： Yakov Roizin ,  Carmel Sahar ,  Victor Kairys ,  Ruth Shima-edelstein

IPC: H01L31/112 ,  H01L31/024 ,  H01L31/0304 ,  G01J1/42

Abstract: A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer. An AlGaN layer is formed over the upper surface of the high-resistance GaN layer. A source contact and a drain contact extend through the AlGaN layer and contact the upper surface of the high-resistance GaN layer (and are thereby electrically coupled to the 2DEG channel). A drain depletion region extends entirely from the upper surface of the high-resistance GaN layer to the low-resistance GaN layer under the drain contact. An electrical current between the source and drain contacts is a function of UV light received by the GaN stack. An electrode is connected to the low-resistance GaN layer to allow for electrical refresh of the UV sensor.